NON-VOLATILE SEMICONDUCTOR MEMORY CELL HAVING GATE ELECTRODE ON SIDEWALL OF GATE ELECTRODE PART

Title:

NON-VOLATILE SEMICONDUCTOR MEMORY CELL HAVING GATE ELECTRODE ON SIDEWALL OF GATE ELECTRODE PART

Document Type and Number:

WIPO Patent Application WO/1992/016020

Kind Code:

A1

Abstract:

A non-volatile semiconductor memory cell which has a gate electrode part (11) such that a floating gate (5), a second insulating film (6) and a control gate electrode (7) are formed in this order on a first conductive type semiconductor substrate (1). Further, a side part insulating film (8) is formed on the sidewall of the gate electrode part (11), and on the film (8) a sidewall gate electrode (10) insulated from the substrate (1) by a third insulating film (9). In the memory cell having such a constitution, according to this invention, the ratio (C1/C2) of the capacitance C1 between the floating and control electrodes to the capacitance C2 between the floating and sidewall gate electrodes is made to be (C1/C2) > 4, for transferring the potential of the control gate electrode to the floating gate electrode effectively.

More Like This:

JP6562518	High-k, metal-gate CMOS process flow integration of memory transistors
JPS52128075	MOS-TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
JPWO2007091302	Semiconductor devices and their manufacturing methods

Inventors:

YAMADA SEIJI (JP)
NARUKE KIYOMI (JP)

Application Number:

PCT/JP1991/000298

Publication Date:

September 17, 1992

Filing Date:

March 06, 1991

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOSHIBA KK (JP)

International Classes:

H01L29/423; H01L29/788; (IPC1-7): H01L29/788

Foreign References:

JPH02114674A	1990-04-26
JPH033274A	1991-01-09

Other References: