Title:
NONVOLATILE STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/228553
Kind Code:
A1
Abstract:
In the present invention, a reference potential used for detecting data stored in memory cells is optimized in accordance with the positions where the memory cells are arranged. This nonvolatile storage device includes memory cells and reference memory cells. The memory cells are arranged in a matrix in row and column directions, and the memory cells store data used to generate data potentials that are transmitted in the column direction. The reference memory cells are distributed in the column direction, and the reference memory cells store reference data used to generate reference potentials when data stored in the memory cells is detected. The memory device may further include a selection control circuit that controls the selected positions of the reference memory cells on the basis of the selected positions of the memory cells from which data is read.
Inventors:
SHUTO YUSUKE (JP)
Application Number:
PCT/JP2023/012469
Publication Date:
November 30, 2023
Filing Date:
March 28, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
G11C11/16; G11C7/04; G11C7/14; G11C13/00
Domestic Patent References:
| WO2010041632A1 | 2010-04-15 |
Foreign References:
| JP2002008367A | 2002-01-11 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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