Title:
NOVEL COMPOUND, PRECURSOR COMPOSITION COMPRISING SAME, AND METHOD FOR PREPARING THIN FILM USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/139345
Kind Code:
A1
Abstract:
The present invention pertains to a vapor deposition compound that can be deposited as a thin film by means of vapor deposition. Specifically, the present invention pertains to: a novel compound applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility and thermal stability; a precursor composition comprising the novel compound; a method for preparing a thin film using the precursor composition; and a thin film prepared from the precursor composition.
Inventors:
PARK MIN-SUNG (KR)
KIM HYO-SUK (KR)
NIM MIN-HYUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)
KIM HYO-SUK (KR)
NIM MIN-HYUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)
Application Number:
PCT/KR2021/019283
Publication Date:
June 30, 2022
Filing Date:
December 17, 2021
Export Citation:
Assignee:
HANSOL CHEMICAL CO LTD (KR)
International Classes:
C07F15/06; C23C16/40; C23C16/455
Foreign References:
| KR20170038855A | 2017-04-07 | |||
| KR20080031935A | 2008-04-11 |
Other References:
LUBITZ KATHARINA, SHARMA VARUN, SHUKLA SHASHANK, BERTHEL JOHANNES H. J., SCHNEIDER HEIDI, HOSSBACH CHRISTOPH, RADIUS UDO: "Asymmetrically Substituted Tetrahedral Cobalt NHC Complexes and Their Use as ALD as well as Low-Temperature CVD Precursors", ORGANOMETALLICS, vol. 37, no. 7, 9 April 2018 (2018-04-09), pages 1181 - 1191, XP055945090, ISSN: 0276-7333, DOI: 10.1021/acs.organomet.8b00060
SCHMIDT DAVID, ZELL THOMAS, SCHAUB THOMAS, RADIUS UDO: "Si–H bond activation at {(NHC)2Ni0} leading to hydrido silyl and bis(silyl) complexes: a versatile tool for catalytic Si–H/D exchange, acceptorless dehydrogenative coupling of hydrosilanes, and hydrogenation of disilanes to hydrosilanes", DALTON TRANSACTIONS, RSC - ROYAL SOCIETY OF CHEMISTRY, CAMBRIDGE, vol. 43, no. 28, 1 January 2014 (2014-01-01), Cambridge , pages 10816 - 10827, XP055945094, ISSN: 1477-9226, DOI: 10.1039/c4dt01250j
PALLISTER PETER J., BARRY SEÁN T.: "Surface chemistry of group 11 atomic layer deposition precursors on silica using solid-state nuclear magnetic resonance spectroscopy", THE JOURNAL OF CHEMICAL PHYSICS, vol. 146, no. 5, 1 January 2017 (2017-01-01), US , pages 1 - 10, XP009537697, ISSN: 0021-9606, DOI: 10.1063/1.4968021
SCHMIDT DAVID, ZELL THOMAS, SCHAUB THOMAS, RADIUS UDO: "Si–H bond activation at {(NHC)2Ni0} leading to hydrido silyl and bis(silyl) complexes: a versatile tool for catalytic Si–H/D exchange, acceptorless dehydrogenative coupling of hydrosilanes, and hydrogenation of disilanes to hydrosilanes", DALTON TRANSACTIONS, RSC - ROYAL SOCIETY OF CHEMISTRY, CAMBRIDGE, vol. 43, no. 28, 1 January 2014 (2014-01-01), Cambridge , pages 10816 - 10827, XP055945094, ISSN: 1477-9226, DOI: 10.1039/c4dt01250j
PALLISTER PETER J., BARRY SEÁN T.: "Surface chemistry of group 11 atomic layer deposition precursors on silica using solid-state nuclear magnetic resonance spectroscopy", THE JOURNAL OF CHEMICAL PHYSICS, vol. 146, no. 5, 1 January 2017 (2017-01-01), US , pages 1 - 10, XP009537697, ISSN: 0021-9606, DOI: 10.1063/1.4968021
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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