ORGANIC THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME

Title:

ORGANIC THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2016/117389

Kind Code:

A1

Abstract:

Provided is an organic thin film transistor in which a gate electrode, an organic semiconductor layer, an organic gate electrode layer, a source electrode, and a drain electrode are included on a substrate. The organic semiconductor layer contains an organic semiconductor I comprising a condensed polycyclic aromatic structure in which at least one group AG that does not comprise a reactive silicon group is substituted, said group AG being selected from the group consisting of an acidic group, an onium salt thereof, a hydroxy group, and an amino group. Also provided is a method for producing the organic thin film transistor.

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Inventors:

YOKOI KAZUHIRO (JP)
TAKIZAWA HIROO (JP)

Application Number:

PCT/JP2016/050469

Publication Date:

July 28, 2016

Filing Date:

January 08, 2016

Export Citation:

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Assignee:

FUJIFILM CORP (JP)

International Classes:

H01L51/30; H01L21/336; H01L29/786; H01L51/05

Domestic Patent References:

WO2010016511A1	2010-02-11
WO2013054729A1	2013-04-18

Foreign References:

JP2009524226A	2009-06-25
JP2012151465A	2012-08-09
JP2012174805A	2012-09-10
JP2013115388A	2013-06-10

Attorney, Agent or Firm:

IIDA, Toshizo et al. (JP)
Toshizo Iida (JP)

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