OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE

WIPO Patent Application WO/2023/189004

A1

This oxide semiconductor film has crystalline properties and is provided on a substrate, the oxide semiconductor film including an indium (In) element, and a first metal (M1) element selected from the group consisting of an aluminum (Al) element, a gallium (Ga) element, an yttrium (Y) element, a scandium (Sc) element, and the lanthanide elements. The oxide semiconductor film includes a plurality of crystal grains, each including at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111>, acquired by electron backscatter diffraction (EBSD). In an occupancy rate of crystal orientations calculated on the basis of a measuring point having crystal orientations in which the crystal orientation difference relative to the normal direction of the surface of the substrate is not less than 0 degrees and not more than 15 degrees, the occupancy rate of the crystal orientation <111> is greater than the occupancy rate of the crystal orientation <0001> and the occupancy rate of the crystal orientation <101>.

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WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)

PCT/JP2023/006039

October 05, 2023

February 20, 2023

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JAPAN DISPLAY INC (JP)
IDEMITSU KOSAN CO (JP)

H01L29/786; H01L21/336; H01L21/363

WO2018143073A1

2018-08-09

JP2012253315A

2012-12-20

TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)

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