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Title:
POWER SiC DEVICES HAVING RAISED GUARD RINGS
Document Type and Number:
WIPO Patent Application WO2003073471
Kind Code:
A3
Abstract:
Silicon carbide semiconductor power devices (10) having epitaxially grown guard rings edge termination structure (17) are provided. Forming the claimed guard rings (17) from an epitaxially grown SiC layer (13) avoids the traditional problems associated with implantation of guard rings (17), and permits the use of self aligning manufacturing techniques for making the silicon carbide semiconductor power devices (10).

Inventors:
SANKIN IGOR
DUFRENE JANNA B
Application Number:
PCT/US2003/005156
Publication Date:
November 27, 2003
Filing Date:
February 21, 2003
Export Citation:
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Assignee:
SEMISOUTH LAB INC (US)
International Classes:
H01L21/331; H01L21/337; H01L29/06; H01L29/47; H01L29/732; H01L29/772; H01L29/78; H01L29/80; H01L29/808; H01L29/861; H01L29/868; H01L29/872; H01L29/24; (IPC1-7): H01L31/0312; H01L31/0288; H01L31/112; H01L29/80
Foreign References:
US5243204A1993-09-07
US5329141A1994-07-12
US3755014A1973-08-28
Other References:
See also references of EP 1485942A4
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