Title:
PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, AND PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2004/061918
Kind Code:
A1
Abstract:
A thin film (5) is formed on the surface of a layer (4) to be processed and formed on a substrate (1). A first pattern (6) is formed on the surface of the thin film (5) by lithography (resist coating, pattern exposure, development, and so forth). The first pattern (6) is a periodic dense pattern composed of an opening pattern to be finally formed in the layer (4) and an additional dummy pattern. In exposure, an ultraresolution technique such as modified illumination most suitable for the exposure is used. The thin film (5) is etched by using the first pattern (6) as a mask, and then the first pattern (6) is removed. A second pattern (11) including a desired pattern is formed on the surface of the thin film (5) by lithography. Lastly, the layer (4) is etched by using the thin film (5) and the second pattern (11) as masks to form the desired pattern (16) on the layer (4).
Inventors:
SHIRAISHI NAOMASA (JP)
Application Number:
PCT/JP2003/016545
Publication Date:
July 22, 2004
Filing Date:
December 24, 2003
Export Citation:
Assignee:
NIKON CORP (JP)
SHIRAISHI NAOMASA (JP)
SHIRAISHI NAOMASA (JP)
International Classes:
G03F7/00; G03F7/20; H01L21/311; H01L21/768; (IPC1-7): H01L21/027; H01L21/3065; H01L21/768
Foreign References:
| JPH11214280A | 1999-08-06 | |||
| JPH06252031A | 1994-09-09 | |||
| US6337175B1 | 2002-01-08 |
Attorney, Agent or Firm:
Maeda, Hitoshi (2F Tokyodo Jinboucho 3rd Bldg., 1-17,
Kandajinboucho 1-chom, Chiyoda-ku Tokyo, JP)
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