PATTERNED RELEASE LAYERS, AND METHODS OF MAKING AND USING THEM IN DEVICE MANUFACTURING

INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS

[0001] Any and all applications for which a foreign or domestic priority claim is identified in the Application Data Sheet or PCT Request as filed with the present application are hereby incorporated by reference under 37 CFR 1.57, and Rules 4.18 and 20.6. The present application claims priority to U.S. Provisional Patent Application No. 63/373,900 filed August 30, 2022, the disclosure of which is incorporated herein by reference in its entirety and for all purposes.

BACKGROUND

Field

[0002] This invention relates to release layers used to releasably transfer components from one surface to another during manufacturing of microelectronic devices.

Description of the Related Art

[0003] The transfer of microelectronic objects from one surface to another pervades processes of assembly and packaging of functional products, whether they are purely electronic (as in computer motherboards), optoelectronic (as in displays), sensors, or actuators. The physics of patterning systems limits the size of the system that can be made in one integrated parallel process, and process compatibility limits the type of materials. Thus, useful systems require integration at the packaging level.

[0004] Integrated circuits, which allow various components (e.g., passive components) to be fabricated with the same techniques as transistors, allowed entire functional circuits to be made with parallel processing; that is, the simultaneous processing of an area, rather than a device. Today much of the innovation in microelectronics is centered on packaging, and specifically heterogeneous packaging. This means that many different types of integrated technologies (silicon ICs - digital or analog, compound semiconductor ICs and light emitters and receivers, microelectromechanical sensors, and other devices and systems) are put together in novel ways which achieve greater performance. [0005] Many techniques have recently been used for processing and packaging microelectronics, such as serial pick-and-placc, laser ablation, stamps and adhesives. For example, FIGS. 1A and IB depict a prior art assembly comprising components (i.e., die, dice, dies or chips), disposed directly over a uniform sacrificial layer that is in contact with a donor plate, which can be used for transferring and placing components on a substrate. However, there remains a need for further advances in the art.

SUMMARY

[0006] In one aspect, a patterned assembly is described. The patterned assembly includes a donor plate, and a patterned release layer disposed under a bottom side of the donor plate, the patterned release layer comprising an oligomer and/or polymer composition, and further comprising a plurality of release layer elements, wherein each release layer element comprises a top element surface, a bottom element surface and an element volume, wherein the top and bottom element surfaces are opposite surfaces with the element volume disposed therebetween.

[0007] In some embodiments, the top element surface is in contact with the bottom side of the donor plate. In some embodiments, the at least one release layer element is in the form of a shaped charge. In some embodiments, the at least one release layer element is in a shape selected from a cube, a cuboid, a pyramid, a cylinder, a prism, a pyramid, a cone, a sphere, a hemisphere, a spheroid, a hemispheroid, a torus or combinations thereof. In some embodiments, a surface area of the top element surface is greater than a surface area of the bottom element surface. In some embodiments, a surface area of the bottom element surface is greater than a surface area of the top element surface.

[0008] In some embodiments, the patterned assembly further comprises at least one component, wherein said component comprises an upper component surface and a side component surface, wherein at least one of the upper and side component surfaces are in contact with at least one release layer element. In some embodiments, the at least one release layer element is in contact with substantially all of the side component surface. In some embodiments, the at least one release layer element is in contact with substantially all of the upper component surface. In some embodiments, the at least one release layer element is in contact with a portion of the upper component surface. In some embodiments, the at least one release layer element is asymmetrically in contact with the upper component surface. Tn some embodiments, the patterned assembly further comprises at least one void in the release layer element disposed above the at least one component.

[0009] In some embodiments, the at least one release layer element is configured to control the release velocity of the component when the release layer is decomposed and the component is released. In some embodiments, the at least one release layer element is configured to chip-flip at least one component when the at least one release layer element is decomposed and the at least one component is released. In some embodiments, a plurality of release layer elements are in contact with each of the at least one components. In some embodiments, the donor plate is transparent. In some embodiments, the donor plate is opaque.

[0010] In some embodiments, the oligomer and/or polymer composition comprises an oligomeric and/or polymeric component that comprises a unit of the Formula (I) and/or Formula (II): wherein: each * denotes a chiral carbon; n and m are independently an integer in the range of 1 to 50; each A and E are independently -O-, -NH-, an

an optionally substituted an optionally substituted hydrogen, halogen or C 1-3 alkyl.

[0011] In some embodiments, the oligomer and/or polymer composition comprises a plurality of oligomeric and/or polymeric components and at least two oligomeric and/or polymeric components are different components. In some embodiments, the patterned release layer comprises a plurality of release layer sublayers. In some embodiments, the patterned assembly further comprises a second release layer disposed under the bottom side of donor plate. In some embodiments, the second release layer is adjacent to the patterned release layer. In some embodiments, the second release layer is disposed between the donor plate and the patterned release layer, the second release layer is disposed under both the donor plate and the patterned release layer. In some embodiments, the second release layer is a second patterned release layer.

[0012] In another aspect, a patterned assembly is described. The patterned assembly includes a wafer comprising at least one component, and further comprising a wafer surface, and a patterned release layer disposed over the wafer surface, the patterned release layer comprising an oligomer and/or polymer composition, and further comprising a plurality of release layer elements, wherein each release layer element comprises a top element surface, a bottom element surface and an element volume, wherein the top and bottom element surfaces are opposite surfaces with the element volume disposed therebetween, wherein the at least one component is in contact with the bottom clement surface.

[0013] In some embodiments, the at least one component is selected from a microelectronic component, a passive component, an energy storage device, a circuit packaging, or combinations thereof. In some embodiments, the microelectronic component is selected from die, dice, a chip, a transistor, an LED, a MEMS, or combinations thereof. In some embodiments, patterned assembly further comprises a donor plate in contact with the patterned release layer.

[0014] In another aspect, a method of making a patterned assembly is described. The method includes forming a patterned release layer on a bottom side of a donor plate, wherein the patterned release layer comprises an oligomer and/or polymer composition, and further comprises a plurality of release layer elements.

[0015] In some embodiments, the method further comprises contacting the patterned release layer with a component. In some embodiments, forming comprises depositing the patterned release layer. In some embodiments, depositing the patterned release layer comprises printing the patterned release layer. In some embodiments, the method further comprises depositing a largely continuous release layer, and wherein forming comprises patterning the release layer via removal to form the patterned release layer. In some embodiments, patterning comprises at least one of masking the release layer, exposing the release layer to light, and exposing the release layer to heat. In some embodiments, the mask is an asymmetric mask. In some embodiments, the light is selected from diode light, laser light, arc lamp light, other sources of incoherent light, or combinations thereof. In some embodiments, the donor plate is transparent to a wavelength range of light, and wherein forming the patterned release layer comprises directing the wavelength of light through the transparent donor plate to the release layer. In some embodiments, the donor plate is opaque to a wavelength range of light, and wherein forming the patterned release layer comprises directing to the wavelength range of light onto the opaque donor plate and the release layer.

[0016] In another aspect, a method of making a patterned assembly is described. The method includes forming a patterned release layer on a surface of a wafer, wherein the wafer comprises at least one component, wherein said component is in contact with the pattemed release layer, and wherein the patterned release layer comprises an oligomer and/or polymer composition, and further comprises a plurality of release layer elements.

[0017] In some embodiments, the method further comprises contacting a donor plate to the patterned release layer. In some embodiments, the method further comprises separating the donor plate from the wafer to form an assembly comprising the donor plate, the patterned release layer in contact with and under a bottom side of the donor plate, and the at least one component in contact with the patterned release layer. In some embodiments, the wafer is transparent; and forming the patterned release layer comprises: disposing a release layer on the surface of the wafer, wherein the release layer is in contact with the component, and directing light through the transparent wafer to form the patterned release layer, wherein the patterned release layer is pattered according to masked areas formed by the at least one component.

[0018] In another aspect, a method of transferring a component is described. The method includes providing a patterned assembly comprising a donor plate, a patterned release layer disposed under a bottom side of the donor plate, and at least one component in contact with the patterned release layer, wherein a surface of the at least one component faces the donor plate, and decomposing the patterned release layer to release the at least one component from the patterned assembly, wherein decomposition of the patterned release layer produces a gas product.

[0019] In some embodiments, the method further comprises placing the released at least one component on a substrate. In some embodiments, the surface of the placed at least one component faces away from the donor plate and towards the substrate. In some embodiments, the surface of the placed at least one component faces towards the donor plate and away from the substrate. In some embodiments, decomposing the patterned release layer comprises exposing the patterned release layer to light, heat or combinations thereof. In some embodiments, the donor plate is transparent to a wavelength range of light, and wherein releasing the at least one component comprises directing the wavelength of light through the transparent donor plate to the patterned release layer. In some embodiments, the donor plate is opaque to a wavelength range of light, and wherein releasing the at least one component comprises directing the wavelength of light over the opaque donor plate and the patterned release layer. [0020] Tn some embodiments, the patterned release layer comprises an escape channel, and wherein the gas product is configured to flow through the escape channel when the patterned release layer is decomposed. In some embodiments, the escape channel is configured to control at least one of a trajectory and a velocity of the released at least one component when the patterned release layer is decomposed. In some embodiments, the escape channel is configured to control the orientation of the surface of the at least one component when the patterned release layer is decomposed. In some embodiments, the released at least one component has a release velocity of about 0.5 m/s to about 5 m/s.

[0021] In another aspect, a method of transferring a component is described. The method includes providing a wafer comprising at least one component, providing a patterned assembly comprising a donor plate and a patterned release layer in contact with and disposed under a bottom side of the donor plate, contacting the patterned release layer to the at least one component, and separating the donor plate from the wafer to form a second patterned assembly comprising the donor plate, the patterned release layer, and the at least one component in contact with the patterned release layer.

[0022] These and other embodiments are described in greater detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG. 1A is a side view drawing of a prior art assembly comprising components, a sacrificial layer and a donor plate.

[0024] FIG. IB is a top view drawing of a prior art assembly comprising components, a sacrificial layer and a donor plate.

[0025] FIG. 2A is a top view drawing of a patterned release layer over an area of a surface with dotted release layer elements, according to some embodiments.

[0026] FIG. 2B is a top view drawing of a patterned release layer over an area of a surface with rectangular strips of release layer elements, according to some embodiments.

[0027] FIG. 2C is a top view drawing of a patterned release layer over an area of a surface with vertical and horizontal rectangular strips of release layer elements, according to some embodiments. [0028] FTG. 3A is a top view drawing of a square shaped release layer element of a patterned release layer under and extending beyond the area of a component, according to some embodiments.

[0029] FIG. 3B is a top view drawing of a circular shaped release layer element of a patterned release layer under and extending beyond the area of a component, according to some embodiments.

[0030] FIG. 3C is a top view drawing of a release layer element of a patterned release layer under and does not extend beyond the area of a component, according to some embodiments.

[0031] FIG. 4A is a side view drawing of a donor plate and patterned release layer assembly, according to some embodiments.

[0032] FIG. 4B is a side view drawing of a donor plate, patterned release layer and component assembly, according to some embodiments.

[0033] FIG. 4C is a side view drawing of a wafer, component and patterned release layer assembly, according to some embodiments.

[0034] FIG. 4D is a side view drawing of a wafer, component, patterned release layer and donor plate assembly, according to some embodiments.

[0035] FIG. 5A is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and components, according to some embodiments.

[0036] FIG. 5B is a side view drawing depicting the shape, orientation and position of a release layer element of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0037] FIG. 5C is a side view drawing depicting the shape, orientation and position of a release layer element of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0038] FIG. 5D is a side view drawing depicting the shape, orientation and position of a release layer element of a patterned release layer relative to a donor plate and a component, according to some embodiments. [0039] FTG. 5E is a side view drawing depicting the shape, orientation and position of a release layer element of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0040] FIG. 5F is a side view drawing depicting the shape, orientation and position of a release layer element of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0041] FIG. 5G is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0042] FIG. 5H is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0043] FIG. 51 is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0044] FIG. 5J is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0045] FIG. 5K is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0046] FIG. 5E is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0047] FIG. 5M is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0048] FIG. 5N is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments. [0049] FTG. 50 is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0050] FIG. 5P is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0051] FIG. 5Q is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0052] FIG. 5R is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, wherein the component is offset relative to the release layer elements, according to some embodiments.

[0053] FIG. 5S is a side view drawing depicting the shapes, orientations and positions of release layer elements of a patterned release layer relative to a donor plate and a component, according to some embodiments.

[0054] FIG. 6 is a drawing depicting a process for forming a patterned release layer on a donor plate, according to some embodiments.

[0055] FIG. 7 is a drawing depicting a process for forming a patterned release layer on a wafer, according to some embodiments.

[0056] FIG. 8 is a drawing depicting wafers or donor plates comprising a patterned release layer and their uses in placing components on substrates, according to some embodiments.

[0057] FIG. 9 is a drawing depicting a process of forming a patterned release layer on a donor plate, according to some embodiments.

[0058] FIG. 10A is the initial still image from a high-speed camera video of a component rotating when released from a substrate and a release layer, according to some embodiments.

[0059] FIG. 10B is the second still image from a high-speed camera video of a component rotating when released from a substrate and a release layer, according to some embodiments. [0060] FIG. 10C is the third still image from a high-speed camera video of a component rotating when released from a substrate and a release layer, according to some embodiments.

[0061] FIG. 10D is the fourth still image from a high-speed camera video of a component rotating when released from a substrate and a release layer, according to some embodiments.

[0062] FIG. 10E is the fifth still image from a high-speed camera video of a component rotating when released from a substrate and a release layer, according to some embodiments.

[0063] FIG. 11 is an image of a component that has chip-flipped and landed on a substrate after being released from a release layer, according to some embodiments.

DETAILED DESCRIPTION

[0064] In various embodiments an assembly including a wafer and/or a donor plate with a patterned release layer as described herein may be formed and used in a process for transferring and/or packaging of components (e.g. microelectronic components and/or passive components). The patterned release layer may enable numerous benefits, for example including enabling the use of opaque wafers and/or donor plates (i.e. “backward transfer”), enabling control over the release trajectory, rotation and/or velocity of components, allowing for a less precise specification on the optical system in terms of resolution and edge sharpness, allowing for decreased irradiation levels, decreasing the risk of release layer residue and/or contaminates, and/or enabling additional structural support for securing components that allow for improved shelf life and more aggressive handling of assemblies.

[0065] The term “wafer” is a substrate with x-y dimensions larger than a z dimension, and used for holding components and/or materials. The term “donor plate” is a substrate that temporarily holds materials and/or components (e.g., die) for later transfer to another substrate (e.g., receiving substrate). In some embodiments, the donor plate is transparent or substantially transparent to one or more wavelengths of light. The term “receiving substrate” or “target substrate” is a substrate that receives components transferred from a donor plate. In some embodiments, a wafer is a donor plate or a receiving substrate (i.e., target wafer). In some embodiments, a receiving substrate is an electrical device and/or comprises electrical components that are configured to be in electrical communication with the incoming components (c.g., PCB board, LED backplane, silicon interposer, organic interposer, individual polymer package).

Patterned Release Layers

[0066] The patterned release layer includes a plurality of release layer elements, where each release layer elements is separate from other release layer elements. FIGS. 2A-2C depict embodiments of a patterned release layer over an area of a surface, where FIG. 2A depicts dotted release layer elements, FIG. 2B depicts rectangular strips of release layer elements, and FIG. 2C depicts overlapping vertical and horizontal rectangular strips of release layer elements with voids between the strips. In some embodiments, the voids, for example the voids shown in FIG. 2C, may be shaped as squares, rectangles, circles, or other n-sided polygons.

[0067] The release layer elements may be in various shapes and sizes, and a patterned release layer may include different release layer elements. In some embodiments, a release layer element is in the form of a shaped charge, such that the element is configured to provide a directional force when decomposed. In some embodiments, a release layer element is in a shape selected from a cube, a cuboid, a pyramid, a cylinder, a prism (e.g. a polyhedron with triangle, square, rectangle or any other n-sided polygonal faces), a pyramid, a cone, a sphere, a hemisphere, a spheroid, a hemispheroid, a torus or combinations thereof. The release layer elements may be described as having top and bottom element surfaces that are opposite surfaces with a volume element disposed therebetween. Release layer elements may have top and/or bottom element surfaces that come to a point and/or consist of a point (e.g. pyramids, cones, spheres). In some embodiments, the release layer element may have oblique angles, be elliptical in shape, or be irregular in shape.

[0068] The composition of patterned release layer may include an oligomer and/or polymer composition. The oligomer and/or polymer composition may include an oligomeric and/or polymeric component that is a molecule containing a tetralin or cyclohexene core and a linkage. For example, in an embodiment, the oligomeric and/or polymeric component comprises a unit of the Formula (I) and/or Formula (II).

[0069] In some embodiments, each * denotes a chiral carbon. In some embodiments, a chiral carbon is in a cis orientation. In some embodiments, a chiral carbon is in a trans orientation. In some embodiments, the oligomeric and/or polymeric component has a cis:trans ratio of, of about, of at least, of at least about, of at most, or of at most about, 0: 100, 5:95, 10:90, 15:85, 20:80, 25:75, 30:70, 35:65, 40:60, 45:55, 50:50, 55:45, 60:40, 65:35, 70:30,

75:25, 80:20, 85:15, 90:10, 95:5 or 100:0, or any range of values therebetween. In some embodiments, n is an integer of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 25, 30, 35, 40, 45, 50, 60, 80 or 100, or any range of values therebetween. For example, in some embodiments n is in the range of 1 to 50. In some embodiments, m is an integer of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 25, 30, 35, 40, 45, 50, 60, 80 or 100, or any range of values therebetween. For example, in some embodiments m is in the range of

1 to 50. In some embodiments, linkage A is independently -O-, -NH-, ionally substituted an optionally substituted an optionally substituted an optionally substituted , p nally substituted an optionally substituted o o optionally substituted an optionally substituted or an optionally substituted . In some embodiments, linkage E is independently -O-, -NH-, an optionally substituted , an optionally substituted , an optionally o ionally substituted or an optionally substituted In some embodiments, each R ¹ is independently hydrogen, halogen or

C1-3 alkyl. Tn some embodiments, each R ² is independently hydrogen, halogen or C1-3 alkyl.

In some embodiments, each R ³ is independently hydrogen, halogen or C1-3 alkyl. In some embodiments, each R ⁴ is independently hydrogen, halogen or Cl-3 alkyl. In some embodiments, each R ⁵ is independently hydrogen, halogen or alkyl. In some embodiments, each R ⁶ is independently hydrogen, halogen or Cl-3 alkyl. In some embodiments, each R ⁷ is independently hydrogen, halogen or Cl-3 alkyl. In some embodiments, each R ⁸ is independently hydrogen, halogen or Cl-3 alkyl. In some embodiments, each R ⁹ is independently hydrogen, halogen or C1-3 alkyl. Tn some embodiments, each R ¹⁰ is independently hydrogen, halogen or C1-3 alkyl. In some embodiments, each s is independently an integer in the range of 1 to 10. In some embodiments, each t is independently an integer in the range of 1 to 10.

[0070] When irradiated the linkages A and/or E are cleaved either through heat alone, generated by photothermal heating, or through heat and nucleophilic, acid and/or base catalyzation. Upon cleavage of the linkages, the residue of the linkage is converted into a relatively volatile, unreactive small molecule. The gaseous byproducts generate a force through volume expansion that pushes the adhered component onto the target substrate. The tetralin and cyclohexene cores are aromatic chromophores that facilitate film heating with irradiation by a laser with a wavelength approximately in the range of 240-300nm. The ability to undergo effective heating drives the decomposition kinetics to a microsecond timescale that facilitates a homogenous transfer force.

[0071] In some embodiments, the oligomer and/or polymer composition comprises a plurality of oligomeric and/or polymeric components. In some embodiments, at least two oligomeric and/or polymeric components are different components, hr some embodiments, the patterned release layer comprises a plurality of release layer sublayers.

[0072] In various embodiments, the release layer composition comprises an (optional) thermal sensitizing agent, in the form of one or more additives that absorb light and convert it into heat. Thermal sensitizing agents may have a high photon absorption quantum yield, a low fluorescence/phosphorescence quantum yield, and/or a short excited state lifetimes that decay through non-irradiative pathways. They may be used in amounts effective to aid the heating rate during irradiation and thereby increase the rate of linkage decomposition and gas formation. These agents can also facilitate heating with lower power and longer wavelength lasers. In some embodiments, the thermal sensitizing agent will form a homogenous film with the release layer formulation. In some embodiments, the thermal sensitizing agent will form a transparent film with the release layer formulation. In some embodiments, the thermal sensitizing agent will form an opaque film with the release layer formulation. Examples of thermal sensitizing agents in some embodiments include, inorganic agents, gold plasmonic nanoparticles, silver plasmonic nanoparticles, gold nanowires, silver nanowires, carbon based agents, carbon nanotubes, carbon black, graphene, graphene oxide, organic based agents, and metallic agents. Tn some embodiments, organic based thermal sensitizing agents include one or more of the following structural properties: aromaticity, fused multicyclic systems, S or N containing heterocycles, multicyclic systems, and/or multi-aromatic systems. Examples of organic based thermal sensitizing agents include melanin, eumelanin, indole, pyrrole, quinoline, purine, triphenyl methyl compounds (e.g. (methoxymethanetriyl)tribenzene), fused aromatic compounds (e.g. anthracene and pyrene), dibenzothiophene, thiophene, and derivatives thereof.

[0073] In various embodiments, an (optional) acid or base additive is included in the release layer composition in an amount effective to catalyze the oligomeric and/or polymeric decomposition. In some embodiments, the acid additive is selected from a sulfonic acid (e.g., p-tolucncsulfonic acid, methane sulfonic acid, heptadecafluorooctanesulfonic acid), a benzoic acid (e.g., benzoic acid, salicylic acid, nonyloxybenzoic acid, oxybis(benzoic acid)), a monocarboxylic acid (e.g., butyric acid, perfluorooctanoic acid), a multifunctional carboxylic acid (e.g., citric acid, malic acid, fumaric acid), derivatives thereof (e.g., butene- l,2-dio-l(p- toluenesulfonate)), and combinations thereof. In some embodiments, the base additive is selected from an ammonium hydroxide (e.g., Tetrabutylammonium hydroxide), a tertiary amine (e.g., N,N-diisopropylethylamine), an amino base (e.g., l,4-diazabicyclo[2.2.2]octane, Bis[2-(N,N-dimethylamino)ethyl] ether, Pentamethyldiethylenetriamine, 1,8- Diazabicyclo[5.4.0]undec-7-ene, l,5,7-triazabicylco[4.4.0]dec-5-ene), a pyridine base (e.g., 4- (Dimethylamino)pyridine), derivatives thereof, and combinations thereof. In some embodiments, the acid additive is a photoacid generator (PAG). In some embodiments, the PAG includes a chromophore unit and an acid precursor unit. In some embodiments, the chromophore unit is selected from diphenyliodonium, triphenylsulfonium, and combinations thereof. In some embodiments, the acid precursor unit is selected from trifluoromethanesulfonate (i.e., triflate), hexafluorophosphate, nitrate, p-toluenesulfonate, perfluoro- 1 -butanesulfonate, and combinations thereof. In some embodiments, the PAG is an ionic PAG or a non-ionic PAG. In some embodiments, the ionic PAG is selected from diphenyliodonium nitrate, bis(4-tert-butylphenyl) iodonium perfluoro- 1 -butanesulfonate, bis(4-tert-butylphenyl)iodonium p-toluenesulfonate, (4-phenylthiophenyl)diphenylsulfonium triflate, triarylsulfonium hexafluorophosphate, and combinations thereof. In some embodiments, the non-ionic PAG is selected from N-hydroxynaphthalimide triflate, N- hydroxy-5-norbornene-2,3-dicarboximide perfluoro- 1 -butanesulfonate, 2-(4-methoxystyryl)- 4,6,-bis(trichloromcthyl)-l,3,5-tirazinc, and combinations thereof. In some embodiments, the PAG is (4-Phenylthiophenyl)diphenylsulfonium trifluoromethanesulfonate, . In some embodiments, the acid or base additive is included in the release layer composition in an amount of, of about, of at most, or of at most about, 0.1 wt%, 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 12 wt%, 15 wt%, 18 wt% or 20 wt%, or any range of values therebetween.

[0074] In various embodiments, the release layer composition comprises an (optional) low molecular weight additives that will vaporize under the conditions of the transfer. One or more such additives can be used in amounts that are effective to enhance the force generation during irradiation and thereby may aid in the lift or release of components from the release layer. In some embodiments, a low molecular weight additive may also aid in altering the viscoelastic properties of the release layer, thereby facilitating faster bonding at lower temperatures.

[0075] In another embodiment, additives that absorb light and convert it into heat can be the main ingredient of the release layer. They may be used in amounts effective to aid the heating rate during irradiation and thereby increase the rate of oligomeric and/or polymeric decomposition and gas formation. These agents can also facilitate heating with lower power and longer wavelength lasers. Examples of additives include collodial metals, Si, SiCh, TiCh, SnC , anthracene, naphthalene, dimethoxybenzene, tetrahydronaphthalene, diphenyl ether, phenylcyclohexane, tert-butylphenol, acetoxy-tetrahydronaphthalene, and derivatives thereof. In some embodiments, the additives are configured to absorb at wavelengths of, of about, of at most, of at most about, of at least, or of at least about, 300 nm, 320 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1000 nm, 1100 nm, 1300 nm or 1500 nm, or any range of values therebetween.

[0076] In another embodiment, additives that vaporize under the conditions of the transfer can be the main ingredient of the release layer. Additives may be used in amounts effective to enhance the force generation during irradiation. In some embodiments, the additive may be any organic molecule that does not contain heteroatoms besides oxygen. The additives may be used to modulate the physical properties for processing the release layer in its solid film state by lowering the films Tg, which may allow for reduced temperatures and pressures to be utilized while attaching components to be transferred. Tn some embodiments, additives arc vaporizable when irradiated.

[0077] In some embodiments, the additive has a molecular weight of, of about, of at most, or of at most about, 500 Da, 300 Da, 200 Da, 180 Da, 160 Da, 150 Da, 140 Da, 130 Da, 120 Da, 110 Da, 100 Da, 80 Da, 50 Da, 30 Da or 10 Da, or any range of values therebetween. In some embodiments, the additive has a boiling point of, of about, of at most, or of at most about, 400 °C, 300 °C, 275 °C, 250 °C, 200 °C, 190 °C, 180 °C, 170 °C, 160 °C, 150 °C, 140 °C, 130 °C, 120 °C, 110 °C, 100 °C, 90°C, 80 °C, 70 °C, 60 °C, 50 °C or 40 °C, or any range of values therebetween. In some embodiments, the additive has a flash point of, of about, of at least, or of at least about, 800 °C, 700 °C, 600 °C, 550 °C, 500 °C, 475 °C, 450 °C, 425 °C, 400 °C, 375 °C, 350 °C, 320 °C, 310 °C, 300 °C, 275 °C, 250 °C or 200 °C, or any range of values therebetween. In some embodiments, the additive has a melting point of, of about, of at most, or of at most about, 250 °C, 200 °C, 150 °C, 140 °C, 130 °C, 120 °C, 110 °C, 100 °C, 90°C, 80 °C, 70 °C, 60 °C, 50 °C, 40 °C, 35 °C, 30 °C, 25 °C, 20 °C, 10 °C or 0 °C, or any range of values therebetween. In some embodiments, the additive has a room temperature vapor pressure of, of about, of at most, or of at most about, 0.8 torr, 0.7, tore, 0.6 torr, 0.5 torr, 0.4 torr, 0.3 torr, 0.2 torr, 0.1 torr, 0.08 torr, 0.06 torr, 0.04 torr, 0.02 torr or 0.01 torr, or any range of values therebetween.

[0078] In some embodiments, the oligomer and/or polymer composition comprises a plurality of oligomeric and/or polymeric components. In some embodiments, at least two oligomeric and/or polymeric components are different components. In some embodiments, the release layer comprises a plurality of release layer sublayers. In some embodiments, the release layer has a thickness of, of about, of at most, or of at most about, 0.1 pm, 0.5 pm, 0.8 pm, 0.9 pm, 1 pm, 1.1 pm, 1.2 pm, 1.3 pm, 1.4 pm, 1.5 pm, 1.6 pm, 1.8 pm, 2 pm, 2.2 pm, 2.5 pm, 3 pm, 3.5 pm or 4 pm, 5 pm, 7 pm, 10 pm, 15 pm, 20 pm, 25 pm, 30 pm, 40 pm, 50 pm, 60 pm, 70 pm, 80 pm, 90 pm, 100 pm, 120 pm, 150 pm or 200 pm, or any range of values therebetween.

Patterned Assembly

[0079] The patterned release layer may be disposed on or under any surface, for example such as donor plates and wafers, to form a patterned assembly. In some embodiments, the assemblies can further comprise components. Tn some embodiments, the component is selected from a microelectronic component, a passive component, an energy storage device, a circuit packaging, or combinations thereof. In some embodiments, the microelectronic component is selected from die, dice, a chip, a transistor, an LED, a MEMS, or combinations thereof.

[0080] FIGS. 3A-3C depict a top view of release layer elements of a patterned release layer under a component, and show a square shaped release layer element extending beyond the area of a component, a circular shaped release layer element extending beyond the area of a component, and a release layer element that does not extend beyond the area of a component, respectively.

[0081] FIGS. 4A-4D depict a number of wafer and/or donor plate patterned assemblies according to embodiments of the present disclosure. FIG. 4A depicts a patterned assembly including a donor plate and a patterned release layer disposed under a bottom side of the donor plate. FIG. 4B depicts a patterned assembly including a donor plate and a patterned release layer disposed under a bottom side of the donor plate, and components with an upper component surface in contact with the release layer elements. FIG. 4C depicts a patterned assembly, including a wafer comprising components, and a patterned release layer disposed over the wafer surface and in contact with the components. FIG. 4D depicts a patterned assembly, including a wafer comprising components, and a patterned release layer disposed over the wafer surface and in contact with the components, and further comprising a donor plate in contact with the patterned release layer. FIGS. 5A-5S depict various shapes, orientations and positions of release layer elements of patterned release layers relative to a donor plate and a component. Although FIGS. 5A-5S depict patterned release layers with respect to a donor plate, the patterned release layers and their release layer elements may also be utilized in wafer configurations.

[0082] Those skilled in the art will recognize that the terms “top” or “upper” and “bottom” or “lower” as used herein to describe relative (i.e., not absolute) positions and/or orientations of various features with respect to each other. For example, FIGS. 4B and 5 A may depict the same relative positions and orientations of the donor plate (DP), patterned release elements and components. [0083] Tn some embodiments, an upper, lower, and/or side component surface of the component is in contact with the release layer clement. In some embodiments, a release layer element is in contact with substantially all of an upper, lower, and/or side component surface. In some embodiments, a release layer element is in contact with a portion of an upper, lower, and/or side component surface. In some embodiments, a release layer element is asymmetrically in contact with a component surface, for example the release layer element may be off-center (i.e., offset) and/or non-uniformly distributed across the surface of a component, and/or a component may be positioned off-center (i.e., offset) over one or more release layer elements.

[0084] In some embodiments, the assembly includes a void, cavity or escape channel between the donor plate and the component. For example in some embodiments, the void is positioned within a release layer element or between a pair of release layer elements in contact with a component. Examples of voids are depicted in FIGS. 5G, 5H, 5J, 5M and SPSS. In some embodiments, a gas by-product formed when the patterned release layer is decomposed is configured to flow through the escape channel when the patterned release layer is decomposed.

[0085] In some embodiments, the patterned release layer, with or without a void, is configured to control the release velocity and/or trajectory of the component when the release layer is decomposed and the component is released. In some embodiments, the patterned release layer, with or without a void, is configured to chip-flip at least one component when the at least one release layer element is decomposed and the at least one component is released. In some embodiments, chip-flipping rotates the component by a predetermined amount, such as a rotation of, or of about, 10°, 45°, 90° or 180°, or any range of values therebetween. In some embodiments, chip-flipping rotates the component at a rotational rate of 180° in, in about, in at least, or in at least about, 10 pm, 20 pm, 30 pm, 40 pm, 50 pm, 60 pm, 70 pm, 80 pm, 90 pm, 100 pm, 150 pm or 200 pm, or any range of values therebetween. Control over rotation may be achieved in various ways, e.g., by asymmetrical positioning of the component and/or asymmetrical decomposition (e.g., shaped charge) of the release layer element(s), for example as depicted in FIG. 5R. In some embodiments, plurality of release layer elements are in contact with a component, for example as depicted in FIGS. 5G-5M, 50 and 5P-5S. [0086] Tn some embodiments, the patterned assembly includes a second release layer disposed under the bottom side of donor plate, for example as depicted in FIGS. 5L, 5N, 50 and 5P. In some embodiments, the second release layer is adjacent to the patterned release layer. In some embodiments, the second release layer is disposed between the donor plate and the patterned release layer. In some embodiments, the second release layer is disposed under both the donor plate and the patterned release layer, for example as depicted in FIG. 5N. In some embodiments, the second release layer is a second patterned release layer, for example as depicted in FIGS. 5L, 5N and 5P.

[0087] In some embodiments, a release layer element may be disposed below a component and at least a portion of the release layer element may overhang beyond an edge of the component, for example as depicted in FIGS. 5B, 5C, 5J, 5N and 5Q-5S. In some embodiments, a release layer element may be disposed below a component and at least a surface of the release layer element in contact with the component may extend from an edge of the component to within the edge of the component without meeting or overhanging beyond an opposite edge of the component, for example as depicted in FIGS. 5H, 5M and 5Q-5S. In some embodiments, a release layer element may be disposed below a component and overcut or undercut such that an edge of the release layer element is at an angle other than normal relative to the surface of the donor plate and/or component, for example as depicted in FIGS . 5B-5E, 51, 5 J and 5S.

[0088] In some embodiments, a release layer element has a top surface area the same or similar to a bottom surface area, for example as depicted in FIGS. 5A, 5F, 5G, 5H and 5K-5R. In some embodiments, a release layer element has a top surface area greater than a bottom surface area, for example as depicted in FIGS. 5D and 5E. In some embodiments, a release layer element has a top surface area less than a bottom surface area, for example as depicted in FIGS. 5B, 5C and 5S.

[0089] In some embodiments, the donor plate and/or wafer is at least partially transparent to light of the appropriate wavelength, typically ultraviolet and/or visible radiation. In some embodiments, the donor plate and/or wafer is opaque. Methods of Making the Patterned Release Layer

[0090] The patterned release layer can be formed on or under any surface, for example such as donor plates and wafers. In some embodiments, the patterned release layer is prepared by printing, removing, masking, exposing to light, exposing to heat, or any combination thereof of one or more release layers, patterned release layers and/or patterned release layer elements. In some embodiments, the patterned release layer is deposited on a surface, for example such as by printing the patterned release layer. In some embodiments, individual release layer elements are printed onto a surface to form the patterned release layer. In some embodiments, a largely continuous release layer is formed (e.g., deposited) on a surface, and the release layer is patterned via removal to form the patterned release layer. In some embodiments, patterning comprises at least one of masking the release layer, exposing the release layer to light (e.g., photolithography), and exposing the release layer to heat. In some embodiments, the mask is stepper and/or contact aligner. In some embodiments, the mask is an asymmetric mask. In some embodiments, the light is selected from diode light (e.g., LED), laser light, arc lamp light, other sources of incoherent light, or combinations thereof. In some embodiments, the release layer may be exposed to light at a normal angle (90°) or at an angle less than 90°. A mask or masking may be performed by any element that prevents irradiative light from reaching (i.e., shadows) an element of interest (e.g., release layer), for example such as separate mask layer or one or more components. A masked area may be referred to as a shadowed area.

[0091] FIGS. 6 and 7 depict processes for forming a patterned release layer on a donor plate and wafer, respectively, according to some embodiments. In FIG. 6 process 600 is shown, and begins with providing a donor plate with a largely continuous release layer as shown in step 602. The donor plate with a largely continuous release layer is exposed to light (hv) in step 604 to form a patterned release layer as shown in step 606. FIG. 6 shows that the continuous release layer may be exposed to light from the release layer facing side of the assembly, and/or through the donor plate facing side of the assembly. In embodiments, where light is directed to the release layer facing side of the assembly, the donor plate may be opaque or at least partially transparent. In embodiments, where light is directed through the donor plate the donor plate is at least partially transparent to at least the wavelength range of light exposed. In some embodiments, prior to, concurrently with or subsequent to step 604 the release layer is heated such that the pattern release layer is formed. Tn some embodiments, the light exposure in step 604 also imparts heat to the release layer such that a patterned release layer is formed without an additional heating step.

[0092] In FIG. 7 process 700 is shown, and begins with providing a wafer comprising components includes a largely continuous release layer in contact with the components as shown in step 702. The largely continuous release layer is exposed to light in step 704 to form a patterned release layer as shown in step 706. FIG. 7 shows that the continuous release layer may be exposed to light from the release layer facing side of the assembly, and/or through the wafer facing side of the assembly. In embodiments, where light is directed to the release layer facing side of the assembly, the wafer may be opaque or at least partially transparent. In embodiments, where light is directed through the wafer the wafer is at least partially transparent to at least the wavelength range of light exposed. In some embodiments where light is directed through the wafer, the release layer elements of the patterned release layer are formed behind the components that are opaque to the wavelength of light used. In some embodiments, prior to, concurrently with or subsequent to step 704 the release layer is heated such that the pattern release layer is formed. In some embodiments, the light exposure in step 704 also imparts heat to the release layer such that a patterned release layer is formed without an additional heating step.

[0093] In some embodiments, more complex patterns are formed by exposing the release layer and/or patterned release layer to a graded intensity of light and/or light at angles, exposing different areas to different wavelengths of light (e.g., in order to control the extinction depth), and/or exposing different areas of the release layer and/or patterned release layer elements from different sides (e.g., top, bottom, left, right, front, back).

[0094] In some embodiments, the release layer, patterned release layer and/or release layer element is exposed to radiation of a wavelength of, of about, of at most, or of at most about, 100 nm, 150 nm, 200 nm, 220 nm, 230 nm, 240 nm, 250 nm, 260 nm, 270 nm, 280 nm, 290 nm, 300 nm, 320 nm, 340 nm, 350 nm, 370 nm, 380 nm, 400 nm or 450 nm, or any range of values therebetween for the purpose of activation and/or degradation. In some embodiments, the release layer, patterned release layer and/or release layer element is exposed to a radiation fluence of, of about, of at least, or of at least about, 1 mJ/cm ² , 2 mJ/cm ² , 3 ml/cm ² , 4 ml/cm ² , 5 ml/cm ² , 6 ml/cm ² , 7 ml/cm ² , 8 ml/cm ² , 9 ml/cm ² , 10 ml/cm ² , 20 mJ/cm ² , 30 m,T/cm ² , 40 m.T/cm ² , 50 mJ/cm ² , 60 mJ/cm ² , 70 mJ/cm ² , 80 m.T/cm ² , 90 mJ/cm ² , 100 m.T/cm ² , 150 mJ/cm ² , 200 mJ/cm ² , 300 mJ/cm ² , 400 mJ/cm ² , 500 mJ/cm ² , 600 mJ/cm ² , 700 mJ/cm ² , 800 mJ/cm ² , 900 mJ/cm ² or 1000 mJ/cm ² , or any range of values therebetween for the purpose of activation and/or degradation. In some embodiments, the release layer, patterned release layer and/or release layer element is heated to a temperature of, of about, of at most, or of at most about, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 180°C, 200°C, or any range of values therebetween for the purpose of activation and/or degradation.

Methods of Making and Using the Patterned Assembly

[0095] The patterned assembly can include any surface, for example such as donor plates and/or wafers. In some embodiments, the patterned release layers may be formed according to the methods described herein. For convention, patterned release layers on the donor plate will be referenced as being disposed under or on a bottom side of a donor plate, and patterned release layers on the wafer will be referenced as being disposed over or on a surface of the wafer.

[0096] FIG. 8 depicts wafers or donor plates comprising a patterned release layer according to some embodiments, and its uses. Process 800A of FIG. 8 depicts a wafer patterned assembly 802A comprising a wafer comprising components and a patterned release layer in contact with the components. A donor plate is brought into contact with the wafer patterned assembly 802A as shown in step 804A to form the wafer and donor plate patterned assembly 806 comprising the wafer comprising components, a patterned release layer in contact with the components, and the donor plate in contact with the patterned release layer. Alternatively, process 800B of FIG. 8 depicts donor plate patterned assembly 802B comprising a donor plate and a patterned release layer. A wafer comprising components is brought into contact with the donor plate patterned assembly 802B as shown in step 804B to form the wafer and donor plate patterned assembly 806. The patterned release layer may be bonded to the components during or immediately after step 806. In both processes 800A and 800B the donor plate is separated (e.g., raised) or the wafer is removed to form donor plate patterned assembly 808 comprising the patterned release layer in contact with and under a bottom side of the donor plate, and the at least one component in contact with the patterned release layer. Separating (e.g., raising) the donor plate when the patterned release layer is in contact with the components allows for separation of the wafer and the components as the patterned release layer is attached to both the components and the donor plate. In some embodiments, a membrane and/or release adhesive may still be attached to the components opposite to the donor plate, in which case the membrane and/or release adhesive is removed (e.g., peeled away), leaving a loaded donor plate with a patterned release layer. Such uses of the patterned assemblies allow for accurate picking of a plurality of components.

[0097] In some embodiments, bonding of the release layer, patterned release layer and/or release layer element to the components is performed by contacting the release layer, patterned release layer and/or release layer element with the components, and applying heat and/or pressure. Although for simplicity some figures herein may depict a release layer, a patterned release layer and/or a release layer element(s) disposed on or over only on a single surface of a component, in some embodiments bonding causes the component to be pressed into the volume of the release layer element and/or the release layer element to morph and be disposed on and/or over additional surfaces of the component. In some embodiments, the bonding heat is, is about, is at least, or is at least about, 40°C, 60°C, 80°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 130°C, 140°C or 150°C, or any range of values therebetween. In some embodiments, the bonding pressure is, is about, is at least, or is at least about, 5 kPa, 10 kPa, 20 kPa, 50 kPa, 100 kPa, 500 kPa, 1000 kPa, 5000 kPa, 10000 kPa, 15000 kPa, 20,000 kPa or 30,000 kPa, or any range of values therebetween. In some embodiments, heat and/or pressure may be applied for, for about, for at least, or for at least about 1 minutes, 2 minutes, 3 minutes, 4 minutes, 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 1 hours, 1.5 hours or 2 hours, or any range of values therebetween.

[0098] In addition to the method shown in FIG. 8, the components may be placed on the patterned release layer by various methods. Methods for attaching the components to the patterned release layer include pick and place, bonding and mechanical debonding, bonding and laser liftoff, or combinations thereof.

[0099] Furthermore, FIG. 8 depicts a method of using assemblies to place components on a substrate. When donor plate patterned assembly 808 is exposed to light, the patterned release layer decomposes and releases the components, as shown in step 810, such that the components are placed on a substrate 812. Although FIG. 8 depicts all components simultaneously being released, in some embodiments one or a plurality of components may be selectively released while some components remain bonded to a release layer clement on the donor plate. In some embodiments, selective release may be performed by utilizing a mask and/or a laser.

[0100] In some embodiments, patterned release layer and/or release layer element is exposed to radiation of a wavelength of, of about, of at most, or of at most about, 100 nm, 150 nm, 200 nm, 220 nm, 230 nm, 240 nm, 250 nm, 260 nm, 270 nm, 280 nm, 290 nm, 300 nm, 320 nm, 340 nm, 350 nm, 370 nm, 380 nm, 400 nm or 450 nm, or any range of values therebetween for the purpose of activation and/or degradation. In some embodiments, the patterned release layer and/or release layer element is exposed to a radiation fluence of, of about, of at least, or of at least about, 1 mJ/cm ² , 2 mJ/cm ² , 3 ml/cm ² , 4 ml/cm ² , 5 mJ/cm ² , 6 ml/cm ² , 7 ml/cm ² , 8 mJ/cm ² , 9 ml/cm ² , 10 ml/cm ² , 20 ml/cm ² , 30 ml/cm ² , 40 ml/cm ² , 50 ml/cm ² , 60 mJ/cm ² , 70 mJ/cm ² , 80 mJ/cm ² , 90 mJ/cm ² , 100 mJ/cm ² , 150 mJ/cm ² , 200 ml/cm ² , 300 mJ/cm ² , 400 mJ/cm ² , 500 mJ/cm ² , 600 mJ/cm ² , 700 mJ/cm ² , 800 mJ/cm ² , 900 mJ/cm ² or 1000 mJ/cm ² , or any range of values therebetween for the purpose of activation and/or degradation. In some embodiments, the release layer, patterned release layer and/or release layer element is heated to a temperature of, of about, of at most, or of at most about, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 180°C, 200°C, or any range of values therebetween for the purpose of activation and/or degradation. In some embodiments, prior to, concurrently with or subsequent to irradiation the patterned release layer and/or release layer element is heated such that the patterned release layer and/or release layer element degrades. In some embodiments, the light irradiation also imparts heat to the release layer such that a patterned release layer and/or release layer element degrades without an additional heating step.

[0101] In some embodiments, decomposition of the patterned release layer produces a gaseous by-product. In some embodiments, decomposition of the patterned release layer and/or releasing of the components rotates the component by a predetermined amount (i.e. chip-flip) about one or more axis (e.g., the center or the edge of a component about the x- axis, y-axis or z-axis). In some embodiments, decomposition of the patterned release layer and/or releasing of the components rotates the component by a rotation of, or of about, 10°, 45°, 90° or 180°, or any range of values therebetween. In some embodiments, decomposition of the patterned release layer and/or releasing of the components rotates the component at a rotational rate of 180° in, in about, in at least, or in at least about, 10 pm, 20 pm, 30 pm, 40 pm, 50 pm, 60 pm, 70 pm, 80 pm, 90 pm, 100 pm, 150 pm or 200 pm, or any range of values therebetween. In some embodiments, decomposition of the patterned release layer and/or releasing of the components are performed such that the surface of the placed component faces away from the donor plate and towards the substrate (e.g. chip-flip 180°). In some embodiments, decomposition of the patterned release layer and/or releasing of the components are performed such that the surface of the placed at least one component faces towards the donor plate and away from the substrate (e.g. non chip-flip). Control over the extent of rotation may be exercised in various ways, e.g., by asymmetrical positioning and/or shaping the release layer element(s) to provide asymmetrical force on decomposition.

[0102] FIG. 9 depicts an embodiment of a process 900 of forming a patterned release layer on a donor plate. Process 900 begins with step 902 that includes providing a donor plate with a largely continuous release layer disposed beneath, and a wafer comprising components. The wafer of process 900 is at least partially transparent. The continuous release layer of the donor plate is brought into contact with the components of the wafer in step 904 to form a donor plate and wafer assembly. Subsequently, light (hv) is directed through the wafer, the light is partially shadowed by the components, and the non-shadowed light is directed to non-shadowed portions of the continuous release layer to form a second release layer in step 906. The second release layer includes shadowed portions that are the same, similar to, or substantially similar to, the release layer prior to exposure to light. Furthermore, the non-shadowed portions are shown in step 906 to be partially decomposed. The donor plate and wafer are separated to form an assembly of the donor plate, second release layer and components shown in step 908. When heat is applied to the assembly the non-shadowed portions of the second release layer decompose, substantially decompose or fully decompose to form a patterned release layer with release layer elements that correspond to the shadowed portions, and form a patterned assembly of the donor plate, patterned release layer and components as show in step 910. In some embodiments, the non-shadowed portions are at least partially decomposed, substantially decomposed, or fully decomposed when exposed to light through the wafer. When the non-shadowed portions are fully decomposed, the second release layer is a patterned release layer and may not require a subsequent heat treatment. In some embodiments, the release layer is heated prior to, subsequent to, or concurrently with exposure to light.

EXAMPLES

Example 1 - Chip-Flipped Die Component

[0103] Die components measuring 50 pm x 60 pm with 2-4 pm streets were loaded onto a donor plate comprising 1 pm of a Terefilm® uniform release layer. Each die was irradiated by 40-70 mJ/cm ² of 266 nm light for 6 ns in a 50 pm x 60 pm ± 2 pm area. When a die was irradiated off target on one axis by 4 pm, the die released with a rotational spin as opposed to the typical non-rotational (i.e., straight down) release as is typical when irradiated uniformly. Furthermore, a portion of the release layer near the edge of a die adjacent to the off target irradiated die was also irradiated and removed, thereby forming a patterned release layer element with respect to the adjacent die. As such, when the adjacent die was irradiated perfectly centered the adjacent die chip-flipped and landed upside down when an 80 pm proximity gap between the donor plate and substrate was used.

Example 2 - Uniform Release Layer

[0104] A Terefilm® release layer composition is formed from 1, 2,3,4- tetrahydronaphthalene- 1 ,4-diol carbonate, a (4-phenylthiophenyl)diphenylsulfonium triflate photoacid generator, and a propylene glycol monomethyl ether acetate solvent were combined in a 19:0.95:0.05 mass ratio to form a release layer composition solution. 0.15 mL of the solution was deposited by dynamic spin coating onto a 2 inch x 2 inch x 2.3 mm fused silica wafer spinning at 4000 RPM. The wafer was spun for 30 additional seconds then placed on a 140°C hotplate for 2 minutes for drying. Thereby, a uniform release layer was formed.

Example 3 - Printed Patterned Release Layer

[0105] The release layer composition solution of Example 2 was loaded into a printer, and a patterned release layer was printed onto a substrate. Thereby, a patterned release layer was formed. Example 4 - Masked Patterned Release Layer

[0106] A donor plate with a uniform release layer was placed into a donor plate holder in a light initiated forward transfer (LIFT) apparatus, wherein the donor plate holder is below an objective which projects a mask image onto the donor plate. A grid of lines with no taper of the edges (i.e., clean step at the edge) was created using a mask image with an array of 18 pm x 18 pm squares at a pitch of 26 pm. The masked release layer was exposed to 266 nm light at 10 mJ/cm ² from a laser, or 305 nm light from an LED. Following the light exposure, the donor plate was developed by heating it to 90°C for 2 minutes. The areas of the uniform release layer that were exposed to light degrade as gasses, leaving behind a patterned release layer with a grid of 7 pm wide lines with 18 pm x 18 pm voids. Such a patterned release layer may be similar to the drawing depicted in FIG. 2C.

[0107] Alternatively, the masked release layer was exposed to 266 nm light at a fluence of 50-70 mJ/cm ² from a laser, thereby concurrently heating the release layer to form the same patterned release layer and avoiding a separate heating step.

Example 5 - Loading the Donor Plate with a Patterned Release Layer

[0108] A source substrate (e.g., originating wafer or transfer substrate) comprising 22 pm x 22 pm die is aligned with a donor plate with a patterned release layer as described in Example 4, and is bonded to the donor plate. Bonding is performed by placing the source substrate with die and the donor plate with the patterned release layer together, and then applying 95-115°C of heat followed by applying 10 kPa-20,000 kPa of pressure for 2-10 minutes. The donor plate is moved away from the source substrate such that the die are released from the source substrate and carried by the donor plate and patterned release layer. A membrane and/or release adhesive may still be attached to the die opposite to the donor plate, in which case the membrane and/or release adhesive is peeled away, leaving a loaded donor plate with a patterned release layer. The resulting loaded donor plate with a patterned release layer is an array of 22 pm x 22 pm at 26 pm pitch, with die supported along 2 pm of their perimeter by a release layer element, similar to the depiction in FIG. 5Q. Example 5 - Component Patterning of a Release Layer

[0109] Die arc loaded onto a donor plate comprising a uniform release layer by a loading process similar to that described in Example 5. The loaded donor plate is exposed to light of 2-10 mJ/cm ² incident on the sample from the die side, and the sample is developed on a hotplate at 90°C for 2 minutes. When a collimated light source with a short wavelength (e.g., 266 nm) is used a patterned release layer similar to the depiction in FIG. 5A is formed. When a less columnated light source and/or a longer wavelength (e.g., an LED at 3O8nm) a patterned release layer similar to the depiction in FIG. 5D is formed.

[0110] Alternatively, the loaded donor plate is exposed to UV light at a fluence of 50-70 mJ/cm ² , thereby concurrently heating the release layer to form the same patterned release layer and avoiding a separate heating step.

[0111] As another alternative, a more complex pattern is achieved by patterning the release layer according to Example 3 and/or 4 prior to further patterning according the present Example 5.

Example 6 - Releasing Component Using Patterned Release Layer

[0112] A loaded donor plate comprising 22 pm x 22 pm die at a 26 pm pitch held by a patterned release layer grid of Terefilm® is provided, whereby 18 pm x 18 pm void (i.e., cavity) at the center of each die does not include a release layer element, is loaded into a LIFT system. The patterned release layer is irradiated in the centers of the die with 266 nm light at 40-70 mJ/cm ² using a projection mask projecting a 20 pm x 20 pm area. The decomposition gasses fill the center cavity under the die, thereby launching the die forward with equal force on all sides leading to a placement onto a target substrate. It is estimated that the die is placed onto the target substrate within 1 pm and 0.01 radians of their target, wherein the accuracy is comparable to released die a uniform release layer whose trajectory and destination were more sensitive to the accuracy of the incident mask image.

Example 7 - Chip-Flipping Component Using Patterned Release Layer

[0113] A loaded donor plate similar to that described in Example 6 is provided, except that an offset patterned release layer and/or die are utilized such that an asymmetrical 18 pm x 15 pm void (i.e., cavity) at the center of each die does not include a release layer element. Such a loaded donor plate is produced by bonding the die to the donor plate in an offset way where one side edge of the die is closer to the cavity than the opposite side edge of the same die. As such, one side edge of the die is 2 pm from the edge of the cavity, whereas the opposite side edge of the same die is 5 pm from the edge of the cavity. The remaining two edges of the die remain 2 pm away from the edge of the cavity. The patterned release layer is irradiated in the centers of the die with 266 nm light at 40-70 mJ/cm ² using a projection mask projecting a 20 pm x 20 pm area. Due to the asymmetry in the cavity, it is estimated that the die rotates 180° one time per 50 pm of travel. As the proximity gap for is 60 pm, the die rotates 180° and lands on the opposite side with an accuracy of 1 pm and 0.03 radians.

Example 8

[0114] A series of high-speed camera images of a silicon chip released by a 266 nm Nd:YAG laser pulse are shown in FIGS. 10A-10E. Four about 1 cm x 1 cm x 0.5 mm chips were mounted onto a uniform release layer by pushing manually against the heated release layer, including the back left chip indicated by an arrow in FIGS. 10A-10E. It is believed that the chip indicated by the arrow may have been pushed more strongly on its left side than its right thereby adhering more strongly to the release layer on the left side. The trajectory of the chip indicated by the arrow is shown rotating from horizontal in FIG. 10A to an angle of about 135° in FIG. 10E before detaching from the left edge of the release layer.

Example 9

[0115] FIG. 11 is an image of a component that was chip-flipped and had landed on a substrate after being released from a release layer. Non-uniform light was used on the uniform release layer to induce the chip-flip of the component.

[0116] In some embodiments, decomposing the patterned release layer comprises exposing the patterned release layer to light, heat or combinations thereof. In some embodiments, the patterned release layer is exposed to light from the release layer facing side of the assembly, or through the donor plate facing side of the assembly. In embodiments, where light is directed to the release layer facing side of the assembly, the donor plate may be opaque or at least partially transparent. In embodiments, where light is directed through the donor plate the donor plate is at least partially transparent to at least the wavelength range of light exposed.

[0117] In some embodiments, the patterned release layer is configured to control the release velocity and/or trajectory of the component when the release layer is decomposed and the component is released. In some embodiments, the released at least one component has a release velocity of, of about, of at most, or of at most about, 0.1 m/s, 0.3 m/s, 0.5 m/s, 0.8 m/s, 1 m/s, 2 m/s, 3 m/s, 4 m/s, 5 m/s, 6 m/s, 8 m/s or 10 m/s, or any range of values therebetween. In some embodiments, the patterned release layer is configured to chip-flip at least one component when the at least one release layer element is decomposed and the at least one component is released. Release velocity and/or trajectory can be controlled in various ways similar to control over rotation, e.g., by asymmetrical positioning of the component and/or using a shaped charge release layer element(s).

[0118] In some embodiments, the patterned release layer comprises a void and/or escape channel. In some embodiments, when the patterned release layer is decomposed the gas product is configured to flow through the escape channel. In some embodiments, when the patterned release layer is decomposed the void and/or escape channel is configured to control, or aid in controlling, the velocity and/or trajectory of the released component. In some embodiments, when the patterned release layer is decomposed the escape channel is configured to control, or aid in controlling, the orientation and/or rotation of the component (e.g. chipflip).

[0119] Although the foregoing has been described in some detail by way of illustrations and examples for purposes of clarity and understanding, it will be understood by those of skill in the art that numerous and various modifications can be made without departing from the spirit of the present disclosure. Therefore, it should be clearly understood that the forms disclosed herein are illustrative only and are not intended to limit the scope of the present disclosure, but rather to also cover all modification and alternatives coming with the true scope and spirit of the invention.