Title:
PATTERNING METAL STACK LAYERS OF MAGNETIC SWITCHING DEVICE, UTILIZING A BILAYER METAL HARDMASK
Document Type and Number:
WIPO Patent Application WO2004040602
Kind Code:
A3
Abstract:
The invention relates to magnetic switching devices, and more particularly to a method for patterning metal stack layers of a magnetic switching device utilizing TiN and W as a bilayer metal hardmask (7, 8) patterned in two lithography steps with concommitant hardmask open etch and resist strip steps. The hardmask materials TiN and W are chosen so that the mask open etch chemistry is designed with good selectivity, thereby enabling patterning of the hardmask layers prior to etching of the metal stack layers.
Inventors:
COSTRINI GREG
HUMMEL JOHN P
STOJAKOVIC GEORGE
LOW KIA-SENG
HUMMEL JOHN P
STOJAKOVIC GEORGE
LOW KIA-SENG
Application Number:
PCT/EP2003/012017
Publication Date:
October 14, 2004
Filing Date:
October 29, 2003
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG (DE)
IBM (US)
IBM (US)
International Classes:
G11C11/16; H01F41/30; H01L43/12; (IPC1-7): G11C11/16; H01L29/66; H01F41/30
Domestic Patent References:
| WO2002065475A2 | 2002-08-22 |
Foreign References:
| US20020098676A1 | 2002-07-25 | |||
| US20020098281A1 | 2002-07-25 | |||
| US20020146887A1 | 2002-10-10 | |||
| EP1109170A2 | 2001-06-20 | |||
| US20010041444A1 | 2001-11-15 |
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