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Patent Searching and Data


Title:
PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK
Document Type and Number:
WIPO Patent Application WO/2022/054810
Kind Code:
A1
Abstract:
Provided are a phase shift mask blank with which the occurrence of haze on a mask can be sufficiently minimized, a phase shift mask having few haze defects, and a method for manufacturing said phase shift mask. A phase shift mask blank (10) according to the present embodiment is a phase shift mask blank used to create a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank comprising a substrate (11) and a phase shift film (14) formed on the substrate (11), the phase shift film (14) including a phase layer (12) that allows a predetermined amount of phase and transmittance to be adjusted with respect to the transmitted exposure light and a protective layer (13) that is formed on the phase layer (12) and that prevents gas permeation into the phase layer (12), and, with d1 denoting the film thickness of the phase layer (12) and d2 denoting the film thickness of the protective layer (13), the film thickness (d1) of the phase layer (12) being greater than the film thickness (d2) of the protective layer (13), and the film thickness (d2) of the protective layer (13) being 15 nm or less.

Inventors:
KUROKI KYOKO (JP)
MATSUI KAZUAKI (JP)
KOJIMA YOSUKE (JP)
Application Number:
PCT/JP2021/032896
Publication Date:
March 17, 2022
Filing Date:
September 07, 2021
Export Citation:
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Assignee:
TOPPAN INC (JP)
International Classes:
G03F1/32; G03F1/48
Domestic Patent References:
WO2004059384A12004-07-15
Foreign References:
JPH103162A1998-01-06
JP2003315980A2003-11-06
JP2002162727A2002-06-07
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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