PHASE SHIFT MASK BLANK AND PRODUCTION METHOD THEREFOR

Title:

PHASE SHIFT MASK BLANK AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/1997/004360

Kind Code:

A1

Abstract:

A phase shift mask blank including a translucent film containing silicon, nitrogen and a transition metal selected from the group consisting of tungsten, tantalum, chromium and titanium on a transparent substrate, wherein the proportion of nitrogen in the translucent film is 5 to 70 at%. Since the translucent film has a small surface roughness (nmRa), an excellent phase shift mask can be obtained by patterning the blank.

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Inventors:

MITSUI HIDEAKI (JP)
MATSUMOTO KENJI (JP)
YAMAGUCHI YOICHI (JP)

Application Number:

PCT/JP1995/001432

Publication Date:

February 06, 1997

Filing Date:

July 19, 1995

Export Citation:

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Assignee:

HOYA CORP (JP)
MITSUI HIDEAKI (JP)
MATSUMOTO KENJI (JP)
YAMAGUCHI YOICHI (JP)

International Classes:

F02G5/00; F02M45/04; F02M47/00; F02M47/02; F02M51/06; F02M57/02; F02M59/10; F02M59/36; F02M59/46; G03F1/32; G03F1/68; H01L21/027; F02M63/00; G03F1/00; (IPC1-7): G03F1/08; H01L21/30

Foreign References:

JPH06332152A	1994-12-02
JPH06308713A	1994-11-04
JPH0561183A	1993-03-12
JPH04204653A	1992-07-27

Other References: