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Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/001864
Kind Code:
A1
Abstract:
A photovoltaic device provided with the following: a semiconductor substrate (10); an i-type amorphous layer (12i) formed on the top surface of said semiconductor substrate (10); a p-type amorphous layer (12p) formed on top of said i-type amorphous layer (12i); an i-type amorphous layer (16i) formed on the bottom surface of the semiconductor substrate (10); and an n-type amorphous layer (16n) formed on top of said i-type amorphous layer (16i). The i-type amorphous layers (12i and 16i) each have an oxygen-concentration profile wherein the oxygen concentration decreases stepwise in the thickness direction from the vicinity of the interface with the semiconductor substrate (10). The stepped part of one i-type amorphous layer (12i) has a higher oxygen concentration than the stepped part of the other i-type amorphous layer (16i).

Inventors:
YANO AYUMU (JP)
OGANE AKIYOSHI (JP)
Application Number:
PCT/JP2012/057141
Publication Date:
January 03, 2013
Filing Date:
March 21, 2012
Export Citation:
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Assignee:
SANYO ELECTRIC CO (JP)
YANO AYUMU (JP)
OGANE AKIYOSHI (JP)
International Classes:
H01L31/0747
Foreign References:
JP2008235400A2008-10-02
JP2003258287A2003-09-12
JP2002329878A2002-11-15
Other References:
T.MUELLER: "Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications", JOURNAL OF APPLIED PHYSICS, vol. 107, no. 1, 5 January 2010 (2010-01-05), pages 014504, XP012132551
H.FUJIWARA: "Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells", APPLIED PHYSICS LETTERS, vol. 91, no. 13, 26 September 2007 (2007-09-26), pages 133508, XP012099462
Attorney, Agent or Firm:
YKI Patent Attorneys (JP)
Patent business corporation YKI international patent firm (JP)
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Claims: