Title:
PIEZOELECTRIC MEMS SILICON RESONATOR AND FORMING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/226911
Kind Code:
A1
Abstract:
Disclosed in the present invention are a piezoelectric MEMS silicon resonator and a forming method therefor, and an electronic device. The piezoelectric MEMS silicon resonator comprises: a silicon substrate; a lower cavity, wherein a top plane of the lower cavity is higher than or lower than a top plane of the substrate; a reserved silicon layer, which is located above the lower cavity; and a piezoelectric layer and an upper electrode, which are located above the reserved silicon layer. The forming method comprises: providing a silicon substrate; sequentially forming a sacrificial silicon layer, a reserved silicon layer, a piezoelectric layer and an upper electrode on the silicon substrate; and opening an etched window, and removing the sacrificial silicon layer to form a lower cavity, wherein when the sacrificial silicon layer is P-type doped at a second doping concentration, one of the silicon substrate and the reserved silicon layer is normally N-type doped, and the other of the two is P-type doped at a first doping concentration, or when the sacrificial silicon layer is N-type doped at the second doping concentration, one of the silicon substrate and the reserved silicon layer is normally P-type doped, and the other of the two is N-type doped at the first doping concentration, and the first doping concentration is greater than the second doping concentration.
Inventors:
ZHANG MENGLUN (CN)
YANG QINGRUI (CN)
GONG SHAOBO (CN)
YANG QINGRUI (CN)
GONG SHAOBO (CN)
Application Number:
PCT/CN2021/091096
Publication Date:
November 03, 2022
Filing Date:
April 29, 2021
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H01L41/083; H03H9/02; H01L41/27; H03H3/02; H03H9/17
Foreign References:
| CN110350885A | 2019-10-18 | |||
| CN108183163A | 2018-06-19 | |||
| CN108736856A | 2018-11-02 | |||
| CN103618044A | 2014-03-05 | |||
| US20040253760A1 | 2004-12-16 | |||
| CN111786644A | 2020-10-16 | |||
| CN111902915A | 2020-11-06 |
Attorney, Agent or Firm:
CHINA SMART INTELLECTUAL PROPERTY LTD. (CN)
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