RESONATOR AND METHOD FOR FORMING SAME, AND ELECTRONIC DEVICE

WIPO Patent Application WO/2022/226912

A1

Disclosed in the present invention are a resonator and a method for forming same, and an electronic device. The method comprises: with regard to an SOI wafer comprising a top silicon layer, a buried oxide layer and a base silicon layer, sequentially forming a patterned piezoelectric layer and a base electrode on the top silicon layer; inverting the current semiconductor structure, and then bonding the current semiconductor structure to a lower silicon cap, wherein a lower cavity is formed between the current semiconductor structure and the lower silicon cap; removing the base silicon layer; forming a beam structure, wherein the top silicon layer serves as a driven layer of the beam structure; and bonding an upper silicon cap to the current semiconductor structure, wherein an upper cavity is formed between the current semiconductor structure and the upper silicon cap. In this method, packaging technology for a vacuum cavity of a resonator is achieved by inverting and bonding a device, so as to avoid using an SOI silicon wafer with a cavity, such that the cost is greatly reduced. Moreover, the problem of stress caused by a top silicon restoring, after same is formed, to being flat from being bent and the hard bonding of a base silicon and a buried oxide layer of an SOI with a cavity is overcome.

ZHANG MENGLUN (CN)
YANG QINGRUI (CN)
GONG SHAOBO (CN)

PCT/CN2021/091097

November 03, 2022

April 29, 2021

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UNIV TIANJIN (CN)

H03H9/02; H01L41/00; H03H3/02; H04R31/00

CN110839199A	2020-02-25
CN112039470A	2020-12-04
US20030032293A1	2003-02-13
CN112039469A	2020-12-04
CN110113027A	2019-08-09

CHINA SMART INTELLECTUAL PROPERTY LTD. (CN)

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