Title:
PLASMA PROCESSING DEVICE AND ELECTROSTATIC CHUCK
Document Type and Number:
WIPO Patent Application WO/2023/074475
Kind Code:
A1
Abstract:
A plasma processing device comprising a plasma processing chamber, a mount that is positioned within the plasma processing chamber, and an electrostatic chuck that is positioned on an upper section of the mount. The electrostatic chuck includes a dielectric member that has a substrate support surface and a ring support surface, a clamping electrode that is positioned within the dielectric member, a biasing electrode that is positioned within the dielectric member and is positioned below the clamping electrode, and at least one conductive member that is at least partially positioned within the dielectric member. The dielectric member has a through-hole penetrating from the substrate support surface or the ring support surface to a lower surface of the dielectric member. The at least one conductive member is positioned at the circumference of the through-hole, and extends upward from a location that is at the same height as the biasing electrode or is higher than the biasing electrode.
Inventors:
SATO TAKAHIKO (JP)
YOSHIDA TETSUO (JP)
YOSHIDA TETSUO (JP)
Application Number:
PCT/JP2022/038802
Publication Date:
May 04, 2023
Filing Date:
October 18, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/683; H01L21/3065; H01L21/31; H05H1/46
Foreign References:
| JP2018093173A | 2018-06-14 | |||
| JP2007281243A | 2007-10-25 | |||
| JP2009054746A | 2009-03-12 | |||
| JPH11340309A | 1999-12-10 | |||
| US20210143043A1 | 2021-05-13 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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