Title:
PLASMA PROCESSING DEVICE, INTERNAL MEMBER OF PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING INTERNAL MEMBER OF PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/047746
Kind Code:
A1
Abstract:
In order to provide a plasma processing device with increased processing yield, an internal member thereof, or a method for manufacturing those, the present invention comprises a processing chamber which is disposed inside a vacuum chamber and in which plasma is formed and a member which is disposed inside the processing chamber and a surface of which faces the plasma. The member is configured to include, on the surface, a film composed of a material containing at least one of yttrium oxide, yttrium fluoride, and yttrium oxyfluoride and an element that becomes a +4-valent or +6-valent ion having a smaller ionic radius than that of a +3-valent yttrium ion, the material containing, on average, 1.5 times or more as much oxygen in molar ratio as yttrium and 1 times or more, preferably 1.4 times or more as much fluorine in molar ratio as yttrium.
Inventors:
UEDA KAZUHIRO (JP)
IKENAGA KAZUYUKI (JP)
IKENAGA KAZUYUKI (JP)
Application Number:
PCT/JP2022/032583
Publication Date:
March 07, 2024
Filing Date:
August 30, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2021124996A1 | 2021-06-24 |
Foreign References:
| JP2020511388A | 2020-04-16 | |||
| JP2019192701A | 2019-10-31 | |||
| JP2018190985A | 2018-11-29 | |||
| JP2016089241A | 2016-05-23 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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