Title:
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/004766
Kind Code:
A1
Abstract:
In a disclosed plasma processing device, a first processing condition including the provision of a first processing gas into a chamber and a second processing condition including the provision of a second processing gas into the chamber are respectively applied in a first processing period and a second processing period. In each of the first and second processing periods, source high-frequency power is supplied to generate plasma and an electrical bias is supplied to a board support part. In the first processing period, a plurality of frequencies in a first frequency set are used in the order of frequencies of the source high-frequency power within a waveform period of the electrical bias. In the second processing period, a plurality of frequencies in a second frequency set are used in the order of frequencies of the source high-frequency power within a waveform period of the electrical bias.
Inventors:
KOSHIMIZU CHISHIO (JP)
Application Number:
PCT/JP2023/022815
Publication Date:
January 04, 2024
Filing Date:
June 20, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; H01L21/205; H01L21/3065
Domestic Patent References:
| WO2019244734A1 | 2019-12-26 |
Foreign References:
| JP2022067851A | 2022-05-09 | |||
| JP2021097033A | 2021-06-24 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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