PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

WIPO Patent Application WO/2023/100850

A1

This plasma treatment method comprises: (a) a step for providing, on a substrate support within a chamber, a substrate that has a carbon-containing film and a silicon-containing mask which is formed on the carbon-containing film; (b) a step for supplying a coolant to the substrate support to control the temperature of the substrate support; (c) a step for supplying a process gas into the chamber; and (d) a step for, while step (b) is being performed, generating plasma from the process gas within the chamber with a source RF signal and supplying a bias signal to the substrate support to etch the carbon-containing film. In step (d), the coolant is set so that the temperature of the substrate or of the surface of the substrate support during plasma etching is -70℃ to 100℃, the source RF signal is an RF signal which has power of 2 kW or greater, and the bias signal is a bias RF signal which has power of 2 kW or greater or a bias DC signal which includes a voltage pulse of 2 kV or greater.

JPH10116823	METHOD FOR ETCHING METAL POLYCIDE STRUCTURE BODY
JP5371372	Alumina sintered body and semiconductor manufacturing equipment member, liquid crystal panel manufacturing equipment member and dielectric resonator member
JPH01165122	ETCHING DEVICE

MUKAIYAMA KOKI (JP)
TOMURA MAJU (JP)
KIHARA YOSHIHIDE (JP)
FUKUI NOBUYUKI (JP)

PCT/JP2022/043903

June 08, 2023

November 29, 2022

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TOKYO ELECTRON LTD (JP)

H01L21/3065

JP2012204668A	2012-10-22
JP2021077865A	2021-05-20
JP2015012178A	2015-01-19
JP2016207840A	2016-12-08

SATO, Atsushi et al. (JP)

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