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Title:
POLISHING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2023/171290
Kind Code:
A1
Abstract:
[Problem] To provide a polishing composition and method capable of controlling the SiN removal rate. [Solution] According to the present invention, a polishing composition that contains water, a SiN polishing rate inhibitor, and a polishing agent including cationic particles and that has a pH lower than 5 can reduce the SiN polishing rate with respect to a second material X (e.g., spin-on carbon). In addition, a polishing composition that contains water, a SiN polishing rate accelerator, and a polishing agent including cationic particles, and that has a pH not lower than 5 can increase the SiN polishing rate with respect to the second material X (e.g., spin-on carbon).

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Inventors:
ONISHI SHOGO (US)
Application Number:
PCT/JP2023/005412
Publication Date:
September 14, 2023
Filing Date:
February 16, 2023
Export Citation:
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Assignee:
FUJIMI INC (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
WO2015040979A12015-03-26
WO2019181693A12019-09-26
WO2021172427A12021-09-02
Foreign References:
JP2019070112A2019-05-09
US20120156874A12012-06-21
KR20120077911A2012-07-10
JP2017525793A2017-09-07
JP2017525797A2017-09-07
JP2017524770A2017-08-31
JP2017527104A2017-09-14
JP2017524767A2017-08-31
JP2018170505A2018-11-01
JP2010041037A2010-02-18
JP2019071413A2019-05-09
JP2006210451A2006-08-10
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
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