Title:
POLISHING SOLUTION AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/187977
Kind Code:
A1
Abstract:
Provided is a polishing solution which does not easily generate defects on a polishing surface and is capable of more selectively polishing silicon oxide relative to silicon nitride when applied to CMP, or does not easily generate defects on the polishing surface and exhibits a high polishing rate of both silicon nitride and silicon oxide when applied to CMP. Also provided is a chemical mechanical polishing method using said polishing solution. The polishing solution is used for chemical mechanical polishing, contains an anionic polymer or a cationic polymer and ceria particles having an average aspect ratio of at least 1.5, and has a pH of 3-8. When the polishing solution contains the anionic polymer, the polishing solution is further selected from the group consisting of a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, and a sulfonic acid group.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2019/008082
Publication Date:
October 03, 2019
Filing Date:
March 01, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Foreign References:
| JP2015224276A | 2015-12-14 | |||
| JP2008519466A | 2008-06-05 | |||
| JP2012503880A | 2012-02-09 | |||
| JP2016531429A | 2016-10-06 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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