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Title:
POLYCRYSTALLINE SILICON FRAGMENT, METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON FRAGMENT, AND POLYCRYSTALLINE SILICON BLOCK FRACTURE DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/060076
Kind Code:
A1
Abstract:
[Problem] To provide polycrystalline silicon fragments that can contribute to improvement of operability and productivity in manufacture of single crystal silicon ingots. [Solution] Polycrystalline silicon fragments obtained by fracturing polycrystalline silicon blocks, the content ratio of polycrystalline silicon powder having a particle size of 500 to 1000 μm being 0.1 to 40 ppmw.

Inventors:
KAWAGUCHI KAZUHIRO (JP)
FUJII MASAMI (JP)
UCHIDA SHO (JP)
KONDO MANABU (JP)
MITO YOSHIFUMI (JP)
YOSHIMATSU NOBUAKI (JP)
Application Number:
PCT/JP2015/078723
Publication Date:
April 21, 2016
Filing Date:
October 09, 2015
Export Citation:
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Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/02; B02C1/02
Foreign References:
JP2012162453A2012-08-30
JP2008503423A2008-02-07
JP2012046412A2012-03-08
JP2009184922A2009-08-20
JP2006192423A2006-07-27
JPH06144822A1994-05-24
Other References:
See also references of EP 3208236A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
Maeda and a Suzuki international patent business corporation (JP)
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