Title:
POLYCRYSTALLINE SILICON MATERIAL
Document Type and Number:
WIPO Patent Application WO/2020/204143
Kind Code:
A1
Abstract:
This polycrystalline silicon material is for producing monocrystalline silicon and includes multiple polycrystalline silicon ingots, and is characterized in that, when the total concentration of donor elements present in a bulk of the polycrystalline silicon material is defined as Cd1 [ppta], the total concentration of acceptor elements present in the bulk of the polycrystalline silicon material is defined as Ca1 [ppta], the total concentration of donor elements present in the surface of the polycrystalline silicon material is defined as Cd2 [ppta], and the total concentration of acceptor elements present in the surface of the polycrystalline silicon material is defined as Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy the relation 5 [ppta] ≤ (Ca1+Ca2)-(Cd1+Cd2) ≤ 26 [ppta].
Inventors:
ASANO TAKUYA (JP)
SAIKI KOUICHI (JP)
EMOTO MIKI (JP)
ONODA TOORU (JP)
SAIKI KOUICHI (JP)
EMOTO MIKI (JP)
ONODA TOORU (JP)
Application Number:
PCT/JP2020/015226
Publication Date:
October 08, 2020
Filing Date:
April 02, 2020
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C30B29/06; C30B15/00
Foreign References:
| JP2004315336A | 2004-11-11 | |||
| JP2014156376A | 2014-08-28 | |||
| JP2016108160A | 2016-06-20 | |||
| JP2018090466A | 2018-06-14 | |||
| JP2018525308A | 2018-09-06 | |||
| JP2018095515A | 2018-06-21 | |||
| JP2017069240A | 2017-04-06 | |||
| JP2004315336A | 2004-11-11 | |||
| JP2013151413A | 2013-08-08 | |||
| JP2014156376A | 2014-08-28 | |||
| JP2018090466A | 2018-06-14 | |||
| JPH10316413A | 1998-12-02 | |||
| JP2004250317A | 2004-09-09 | |||
| JP2005067979A | 2005-03-17 | |||
| JP2012091960A | 2012-05-17 | |||
| JP2013129592A | 2013-07-04 | |||
| JP2017056959A | 2017-03-23 | |||
| JP2005172512A | 2005-06-30 |
Other References:
See also references of EP 3936642A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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