POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING METHOD

Title:

POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING METHOD

Document Type and Number:

WIPO Patent Application WO/2017/130870

Kind Code:

A1

Abstract:

This polymer has a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II), and at least one of the monomer unit (A) and the monomer unit (B) as one or more fluorine atoms. Further, in the formula, R1 is a chlorine atom, a fluorine atom, or an alkyl group substituted by a fluorine atom, R2 is an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom, R3 to R6, R8 and R9 are a hydrogen atom, a fluorine atom, and unsubstituted alkyl group, or an alkyl group substituted by a fluorine atom, R7 is a hydrogen atom, and unsubstituted alkyl group or an alkyl group substituted by a fluorine atom, p and q are integers between 0 and 5, and p+q=5.

More Like This:

WO/1998/030645	ADDITIVES FOR CONTROLLING CURE RATE OF POLYMERIZABLE COMPOSITION
WO/2000/023479	IMPROVED PAPER SIZING AGENTS AND METHODS OF MAKING THE AGENTS AND SIZING PAPER
JP2815652	INDUSTRIAL APPLICABILITY The monomer composition and its use

Inventors:

HOSHINO MANABU (JP)

Application Number:

PCT/JP2017/002023

Publication Date:

August 03, 2017

Filing Date:

January 20, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

ZEON CORP (JP)

International Classes:

C08F212/04; C08F220/22; G03F7/039

Foreign References:

JPS57118243A	1982-07-23
JPS5949536A	1984-03-22
JPS61170735A	1986-08-01
JPH02115852A	1990-04-27

Other References: