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Title:
POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/123667
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a polymer capable of adequately suppressing the collapse of a resist pattern, satisfactorily forming a clear resist pattern, and furthermore improving sensitivity when used as a main chain cleavage-type positive resist. This polymer has a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). [In formula (I), R1 is an organic group having 5-7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or an alkyl group substituted by a fluorine atom; R3 is a hydrogen atom, an unsubstituted alkyl group, or an alkyl group substituted by a fluorine atom; p and q are integers of 0-5; and p + q = 5.]

Inventors:
HOSHINO MANABU (JP)
Application Number:
PCT/JP2017/045204
Publication Date:
July 05, 2018
Filing Date:
December 15, 2017
Export Citation:
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Assignee:
ZEON CORP (JP)
International Classes:
C08F220/22; C08F212/06; G03F7/039; G03F7/20
Domestic Patent References:
WO2017130870A12017-08-03
WO2013145695A12013-10-03
WO2013018569A12013-02-07
Foreign References:
JPS61170735A1986-08-01
JPS5949536A1984-03-22
JPS57118243A1982-07-23
JPS63137227A1988-06-09
JP2000298346A2000-10-24
JP2017134373A2017-08-03
JP2017132965A2017-08-03
JPH083636B21996-01-17
JP2011215243A2011-10-27
JP2011215244A2011-10-27
JP2012150443A2012-08-09
Other References:
See also references of EP 3564276A4
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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