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Title:
POROUS ELECTRODE FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/256029
Kind Code:
A1
Abstract:
Provided is a method with which it is possible to form a porous electrode having excellent coatability and electroconductivity in an industrially advantageous manner. Using a base body, the surface of which is provided with at least one machined hole for an electrode, a material melt containing a metal is atomised, the droplets are suspended, and the obtained atomised droplets are transported into the machined hole for an electrode by means of a carrier gas. Subsequently, a porous electrode is formed on an inner wall of the machined hole for an electrode by causing the atomised droplets to thermally react. Said porous electrode is used for a semiconductor device, an electronic component/component of an electrical apparatus, an optical/electrophotography-related device, an industrial part, etc.

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Inventors:
YAGYU SHINGO (JP)
SASAKI TAKAHIRO (JP)
IGAWA TAKUTO (JP)
Application Number:
PCT/JP2020/023835
Publication Date:
December 24, 2020
Filing Date:
June 17, 2020
Export Citation:
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Assignee:
FLOSFIA INC (JP)
International Classes:
H01L21/285; C23C16/448; H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
WO2010047264A12010-04-29
Foreign References:
JP2009272490A2009-11-19
JP2015532790A2015-11-12
JP2016050347A2016-04-11
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