Title:
SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/256028
Kind Code:
A1
Abstract:
A substrate (10) for semiconductor growth, wherein: the r-plane of a sapphire is used as a main surface; the main surface is provided with a plurality of nanometer-sized protrusion parts (12); and the protrusion parts (12) are formed in the a-axis direction that is perpendicular to the r-axis of the sapphire and the c' direction that is the c-axis of the sapphire projected on the r-plane.
Inventors:
JINNO DAIKI (JP)
Application Number:
PCT/JP2020/023827
Publication Date:
December 24, 2020
Filing Date:
June 17, 2020
Export Citation:
Assignee:
KOITO MFG CO LTD (JP)
International Classes:
C30B29/38; C30B25/18; H01L21/205; H01L33/16; H01L33/22; H01L33/32
Domestic Patent References:
| WO2010023846A1 | 2010-03-04 | |||
| WO2019235459A1 | 2019-12-12 |
Foreign References:
| JP2016111354A | 2016-06-20 |
Attorney, Agent or Firm:
SHIN-EI PATENT FIRM, P.C. (JP)
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