POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2018/131310

A1

This power semiconductor device has: a plurality of power modules, each having a control terminal; a heat dissipation plate, on which the power modules are mounted; and a control substrate, to which the control terminal is adhered. Each of the power modules has a first protruding section close to the control terminal, and a second protruding section far from the control terminal. The heat dissipation plate has: a first recessed section, which engages with the first protruding section, and which is formed with an inner diameter that is larger than the outer diameter of the first protruding section, said first recessed section being at a position corresponding to the first protruding section; and a second recessed section, which engages with the second protruding section, and which is formed in a long hole shape having a short diameter that is longer than the outer diameter of the second protruding section, said second recessed section being at a position corresponding to the second protruding section.

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BESSHI NORIYUKI (JP)
ISHII RYUICHI (JP)
FUKU MASARU (JP)
FUKUHARA KAZUYA (JP)

PCT/JP2017/043029

July 19, 2018

November 30, 2017

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MITSUBISHI ELECTRIC CORP (JP)

H01L25/07; H01L23/28; H01L25/18; H05K3/34; H05K13/04

WO2014013705A1	2014-01-23
WO2016084180A1	2016-06-02

JPH0833336A	1996-02-02
JP2016051878A	2016-04-11
JP2008047634A	2008-02-28
JPH10256421A	1998-09-25
JPH0239488A	1990-02-08
JP2014236191A	2014-12-15

SOGA, Michiharu et al. (JP)

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