PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS

WIPO Patent Application WO/2018/214332

A1

Disclosed are a process chamber and a semiconductor processing apparatus. The process chamber comprises: a chamber body (1), an upper electrode plate (3), a heat source (13) arranged at the top in the chamber body, and a substrate (2) arranged at the bottom in the chamber body. The heat source is arranged opposite a substrate area, wherein a gas transmission channel is arranged in the upper electrode plate, and the upper electrode plate can move between a pre-cleaning process position and a degassing process position; where the upper electrode plate is located in the pre-cleaning process position, the upper electrode plate is located between the heat source and the substrate, and the upper electrode plate is directly opposite the substrate area, so as to carry out a pre-cleaning process on a workpiece (8) to be processed with the help of a process gas from the gas transmission channel; and where the upper electrode plate is located in the degassing process position, the upper electrode plate deviates from the substrate area, and the heat source is directly opposite the substrate area, so as to carry out a degassing process on the workpiece to be processed. The process chamber and the semiconductor processing apparatus can increase the process gas utilization rate and the pre-cleaning effect.

LI MENG (CN)
ZHAO MENGXIN (CN)
DING PEIJUN (CN)
LIU FEIFEI (CN)
LI DONGDONG (CN)
CHEN PENG (CN)

PCT/CN2017/100515

November 29, 2018

September 05, 2017

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BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)

H01J37/32; H01L21/02

CN106548916A	2017-03-29
CN101170053A	2008-04-30
US20090126634A1	2009-05-21
KR100774980B1	2007-11-08
CN102737939A	2012-10-17

TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)

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