Title:
PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2007/013644
Kind Code:
A1
Abstract:
A process for producing polycrystalline silicon which comprises reacting a metal whose chloride has a lower free energy of formation than silicon and whose melting point is lower than that of silicon with a gaseous chlorosilane represented by the following formula (1): SiHnCl4-n (1) (wherein n is an integer of 0-3). In the process, the gaseous chlorosilane is bubbled into a melt of the metal while keeping the molten metal at a temperature which is not lower than 1.03 times the melting point of the metal, in terms of absolute temperature, and is lower than 1.79 times the melting point thereof and which is lower than the melting point of silicon. The chlorosilane is fed at such a rate that the number of moles of the chlorosilane being fed per minute is less than 1.0 percent of the moles of the metal.
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Inventors:
YAMABAYASHI TOSHIHARU (JP)
Application Number:
PCT/JP2006/315088
Publication Date:
February 01, 2007
Filing Date:
July 25, 2006
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
YAMABAYASHI TOSHIHARU (JP)
YAMABAYASHI TOSHIHARU (JP)
International Classes:
C01B33/033
Foreign References:
| JPH0264006A | 1990-03-05 | |||
| JPH11199216A | 1999-07-27 | |||
| JPS59182221A | 1984-10-17 | |||
| JPS368416B1 |
Attorney, Agent or Firm:
ENOMOTO, Masayuki et al. (Limited 5-33, Kitahama 4-chome, Chuo-ku, Osaka-sh, Osaka 50, JP)
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