Title:
PRODUCTION METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/181460
Kind Code:
A1
Abstract:
A method for producing a semiconductor device (1), said method involving: a step for forming a first groove (71) of a depth H in a semiconductor layer (40); a step for filling the first groove (71) with an oxide film, and forming a surface oxide film (34) of a thickness a on the top surface of the semiconductor layer (40) so as to be the same height as is the oxide film; a step for forming a second groove (72) of a depth h which is deeper than is a from the uppermost surface of a third oxide film (7); a step for forming a gate trench (17) which is deeper than is the depth H in the semiconductor layer (40); a step for depositing polysilicon until at least the gate trench (17) and the second groove (72) are filled with polysilicon; a step for forming a peripheral element (51) by injecting impurities into the polysilicon which was deposited in the second groove (72); and a step for causing the thickness of the peripheral element (51) to match the depth h by removing the polysilicon deposited in the gate trench (17) and the polysilicon deposited in the second groove (72) in parallel until the heights thereof match.
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Inventors:
TSUTSUMIDA KAZUMI
JOKYU KATSUYOSHI
MURAYAMA KEIICHI
JOKYU KATSUYOSHI
MURAYAMA KEIICHI
Application Number:
PCT/JP2022/035855
Publication Date:
September 28, 2023
Filing Date:
September 27, 2022
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/866
Domestic Patent References:
| WO2018123799A1 | 2018-07-05 |
Foreign References:
| JP2018098476A | 2018-06-21 | |||
| US20200135713A1 | 2020-04-30 | |||
| JP2016178197A | 2016-10-06 | |||
| CN108389858A | 2018-08-10 | |||
| US20130075810A1 | 2013-03-28 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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