Title:
PROTECTIVE SHEET FOR SEMICONDUCTOR PROCESSING AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/038490
Kind Code:
A1
Abstract:
Provided is a protective sheet for semiconductor processing. The protective sheet can accurately follow irregularities on an adherend surface and adhere thereto and can be peeled without leaving paste after irradiation with active energy rays, even when the irregularities on the surface are large (large bump height) and also after undergoing a step for conducting high temperature treatment at 200°C, for example. This protective sheet for semiconductor processing has a base material, an intermediate layer, and an adhesive layer, wherein the intermediate layer and the adhesive layer are provided above one principal surface of the base material in the stated order; the intermediate layer is a cured product of a resin composition that contains a cross-linking agent (B1) and a (meth)acrylic resin (A1) containing no ethylenically unsaturated group; the adhesive layer is a cured product of an adhesive composition that contains an ethylenically unsaturated group-containing (meth)acrylic resin (A2), a cross-linking agent (B2), and a photopolymerization initiator (C); and the ethylenically unsaturated group-containing (meth)acrylic resin (A2) is an adduct in which an epoxy group-containing ethylenically unsaturated compound (a2-3) is added to a copolymer of a monomer group (M2) that contains an alkyl (meth)acrylate (a2-1) and a carboxylic group-containing ethylenically unsaturated compound (a2-2).
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Inventors:
NAODA KOJI (JP)
YUMOTO KEITA (JP)
SASAKI KAZUHIRO (JP)
YUMOTO KEITA (JP)
SASAKI KAZUHIRO (JP)
Application Number:
PCT/JP2022/030891
Publication Date:
February 22, 2024
Filing Date:
August 15, 2022
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/301; H01L21/304
Domestic Patent References:
| WO2015111310A1 | 2015-07-30 |
Foreign References:
| JP2017092122A | 2017-05-25 |
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
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