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Title:
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/228842
Kind Code:
A1
Abstract:
Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when forming a resist pattern with a high aspect ratio; and a pattern formation method. The radiation-sensitive resin composition contains: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit that has an acid-dissociable group; and a solvent. (In formula (1), R1 is a substituted or unsubstituted monovalent hydrocarbon group having 1-5 carbon atoms or a group including a divalent heteroatom-containing group between the carbon-carbon bonds of the aforementioned hydrocarbon group. R2 and R3 are each a hydrogen atom or a monovalent hydrocarbon group. One of Rf11 and Rf12 is a fluorine atom and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group. Z1 + is a monovalent radiation-sensitive onium cation.) (In formula (2), R4 is a monovalent organic group that includes a cyclic structure and has 3-40 carbon atoms. Rf21 and Rf22 are each a fluorine atom or a monovalent fluorinated hydrocarbon group. Z2 + is a monovalent radiation-sensitive onium cation.)

Inventors:
NEMOTO RYUICHI (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
Application Number:
PCT/JP2023/018516
Publication Date:
November 30, 2023
Filing Date:
May 18, 2023
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
WO2022113663A12022-06-02
Foreign References:
JP2010020204A2010-01-28
JP2010191015A2010-09-02
JP2011002805A2011-01-06
JP2010018573A2010-01-28
JP2008007410A2008-01-17
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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