Title:
RARE-EARTH-DOPED NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR, SEMICONDUCTOR LED, AND SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2022/181432
Kind Code:
A1
Abstract:
The present invention provides a technology for producing a rare-earth-element-doped nitride element having higher brightness and better light-emitting characteristics compared to the prior art, in which a rare-earth-element-doped nitride semiconductor layer is an active layer. A method for manufacturing a rare-earth-element-doped nitride semiconductor element in which, using GaN, InN, AlN, or a mixed crystal of two or more of these as a parent material, a rare earth element is added using organometallic vapor phase epitaxy to form an active layer on a non-polar substrate at a temperature of 800 to 1000°C so that the Ga, In or Al that constitutes the parent material will be replaced. A rare-earth-element-doped nitride semiconductor element in which GaN, InN, AlN or a mixed crystal of two or more of these is used as a parent material, wherein an active layer to which a rare earth element is added is formed on a non-polar substrate so that the Ga, In or Al that constitutes the parent material will be replaced.
Inventors:
FUJIWARA YASUFUMI (JP)
ICHIKAWA SHUHEI (JP)
TAKEO ATSUSHI (JP)
TATEBAYASHI JUN (JP)
ICHIKAWA SHUHEI (JP)
TAKEO ATSUSHI (JP)
TATEBAYASHI JUN (JP)
Application Number:
PCT/JP2022/006333
Publication Date:
September 01, 2022
Filing Date:
February 17, 2022
Export Citation:
Assignee:
UNIV OSAKA (JP)
International Classes:
H01L33/32; H01L21/20; H01L21/205; H01S5/323
Domestic Patent References:
| WO2020050159A1 | 2020-03-12 | |||
| WO2014030516A1 | 2014-02-27 | |||
| WO2010128643A1 | 2010-11-11 |
Foreign References:
| JP2013120847A | 2013-06-17 | |||
| JP2000091703A | 2000-03-31 | |||
| JP2014175482A | 2014-09-22 |
Attorney, Agent or Firm:
JODAI Tetsuji et al. (JP)
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