Title:
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, METHOD FOR MANUFACTURING SAME, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2024/034439
Kind Code:
A1
Abstract:
Provided is a reflective mask blank for EUV lithography in which a multilayer reflective film that reflects EUV light and an absorption film that absorbs EUV light are laminated on a substrate in the stated order from the substrate side, wherein the absorption film contains a metal element X as a main component, the crystal structure of the absorption film has a first crystal structure that serves as a stable crystal structure in the bulk state of the metal element X at normal pressure (1 atm) and 25°C and a second crystal structure that is different from the first crystal structure, and the peak area ratio of the second crystal structure is 9% or greater.
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Inventors:
SEI RYOSUKE (JP)
TSUKIYAMA KEISHI (JP)
TSUKIYAMA KEISHI (JP)
Application Number:
PCT/JP2023/027892
Publication Date:
February 15, 2024
Filing Date:
July 31, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2006062099A1 | 2006-06-15 |
Foreign References:
| JP2021056502A | 2021-04-08 | |||
| JP2021167878A | 2021-10-21 | |||
| JP2022024617A | 2022-02-09 | |||
| JPH09142996A | 1997-06-03 |
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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