Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/104239
Kind Code:
A1
Abstract:
The purpose of the present invention is to obtain a reflective mask blank which enables high contrast to be obtained in an edge portion of a phase shift film pattern. A reflective mask blank in which a multilayer reflection film and a phase shift film for shifting the phase of EUV light are formed in this order on a substrate is characterized in that in a 1μm×1μm region of the surface of the phase shift film, root-mean-square roughness (Rms) obtained by measurement with an atomic force microscope is 0.50 nm or less, and power spectral density at a spatial frequency of 10-100 μm-1 is 17 nm4 or less.
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Inventors:
HAMAMOTO KAZUHIRO (JP)
IKEBE YOHEI (JP)
IKEBE YOHEI (JP)
Application Number:
PCT/JP2015/085020
Publication Date:
June 30, 2016
Filing Date:
December 15, 2015
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/32
Domestic Patent References:
| WO2014104276A1 | 2014-07-03 |
Foreign References:
| JP2009212220A | 2009-09-17 | |||
| JP2014186333A | 2014-10-02 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
Patent business corporation Tsukuni (JP)
Patent business corporation Tsukuni (JP)
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