Title:
REFLECTIVE MASK BLANK AND REFLECTIVE MASK
Document Type and Number:
WIPO Patent Application WO/2024/029410
Kind Code:
A1
Abstract:
Provided are a reflective mask for EUV lithography that can form transfer patterns with high dimensional accuracy in fine hole-like patterns, and a reflective mask blank used for said reflective mask. A reflective mask blank 10 for EUV lithography in which a multilayer reflective film 2 that reflects EUV light and an absorption layer 3 that absorbs EUV light are layered on a substrate 1 in the stated order from the substrate 1 side, wherein: the absorption layer 3 has a refractive index of less than 0.94 and an extinction coefficient of 0.060 or less for EUV light having a wavelength of 13.5 nm; and the phase difference between light reflected from the surface of the multilayer reflective film and the light reflected from the surface of the absorption layer, with respect to incident light of EUV light having a wavelength of 13.5 nm, is 220-320°. Additionally, a reflective mask obtained by forming a mask pattern on the absorption layer 3.
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Inventors:
OKATO TAKESHI (JP)
Application Number:
PCT/JP2023/027272
Publication Date:
February 08, 2024
Filing Date:
July 25, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/32; G03F1/24
Domestic Patent References:
| WO2022050156A1 | 2022-03-10 | |||
| WO2019225736A1 | 2019-11-28 | |||
| WO2021132111A1 | 2021-07-01 | |||
| WO2022065144A1 | 2022-03-31 |
Foreign References:
| JP2022024617A | 2022-02-09 | |||
| JP6929983B1 | 2021-09-01 |
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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