Title:
REFLECTIVE MASK BLANK AND REFLECTIVE MASK
Document Type and Number:
WIPO Patent Application WO/2024/029409
Kind Code:
A1
Abstract:
Provided are: a reflective mask for EUV lithography that can form a transfer pattern having high dimensional accuracy with respect to a fine line-shaped pattern; and a reflective mask blank used for the reflective mask. A reflective mask blank 10 for EUV lithography includes, on a substrate 1 and stacked in the given order from the substrate 1 side, the following: a multilayer reflective film 2 for reflecting EUV light; and an absorption layer 3 for absorbing EUV light. The absorption layer 3 has, for EUV light having a wavelength of 13.5 nm, a refractive index of 0.930 or less and an extinction coefficient of 0.025 or greater, and is configured such that the phase difference between reflected light from the surface of the multilayer reflective film and reflected light from the surface of the absorption layer with respect to incident light of the EUV light having a wavelength of 13.5 nm is 220°-280°. The reflective mask includes a mask pattern formed in the absorption layer 3.
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Inventors:
OKATO TAKESHI (JP)
Application Number:
PCT/JP2023/027271
Publication Date:
February 08, 2024
Filing Date:
July 25, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/32; G03F1/24
Domestic Patent References:
| WO2021085382A1 | 2021-05-06 | |||
| WO2021132111A1 | 2021-07-01 | |||
| WO2023095769A1 | 2023-06-01 |
Foreign References:
| JP2020106639A | 2020-07-09 | |||
| JP2022003417A | 2022-01-11 |
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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