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Title:
RESIST LOWER LAYER FILM COMPOSITION AND METHOD FOR FORMING DUAL DAMASCENE STRUCTURE
Document Type and Number:
WIPO Patent Application WO2008117867
Kind Code:
A1
Abstract:
Provided is a resist lower layer film composition, which has a nitrogen atom content rate of 10 mass% or more in a resist lower layer film when the 300nm thick resist lower layer film is formed by applying a resist on a base material and drying the resist at 250°C for 60 seconds with heat.

Inventors:
YOSHIMURA NAKAATSU (JP)
NATSUME NORIHIRO (JP)
KONNO YOUSUKE (JP)
Application Number:
PCT/JP2008/056131
Publication Date:
October 02, 2008
Filing Date:
March 28, 2008
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Assignee:
JSR CORP (JP)
YOSHIMURA NAKAATSU (JP)
NATSUME NORIHIRO (JP)
KONNO YOUSUKE (JP)
International Classes:
G03F7/11; G03F7/40
Foreign References:
JPH10228113A1998-08-25
JP2002148791A2002-05-22
JPH0950130A1997-02-18
JP2004014841A2004-01-15
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