RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

Title:

RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

Document Type and Number:

WIPO Patent Application WO/2010/038340

Kind Code:

A1

Abstract:

First, a resist film (102) is formed on a substrate (101) by using a resist material containing a monomer which is stable against acids and contains a halogen (fluorine) atom, a polymer which is stable against acids and contains fluorine, a polymer containing an acid-labile group, and a photoacid generator. Next, a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light, while arranging a liquid (103) on the resist film (102). Then, the pattern-exposed resist film (102) is developed, thereby forming a resist pattern (102b) from the resist film (102).

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Inventors:

ENDOU MASAYUKI
SASAGO MASARU

Application Number:

PCT/JP2009/003259

Publication Date:

April 08, 2010

Filing Date:

July 10, 2009

Export Citation:

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Assignee:

PANASONIC CORP (JP)
ENDOU MASAYUKI
SASAGO MASARU

International Classes:

G03F7/004; G03F7/039; G03F7/38; H01L21/027

Foreign References:

JP2004102264A	2004-04-02
JP2005234015A	2005-09-02
JP2005128146A	2005-05-19
US20080233491A1	2008-09-25

Attorney, Agent or Firm:

MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)

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