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Title:
RESIST WITH REDUCED LINE EDGE ROUGHNESS
Document Type and Number:
WIPO Patent Application WO2002091084
Kind Code:
A3
Abstract:
Novel photoresists containing at least about 0.2 molar ratio of a base with respect to the concentration of a photoacid generator present and their preparation are described. It has been discovered that inclusion of a sufficient amount of base counteracts the detrimental effects of photoacid generators, thus providing resists having submicron linewidth resolution.

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JP2003287880IMAGE FORMING METHOD
WO/1993/006530COATING COMPOSITIONS
JP5532200Bis (aminophenol) derivatives and their manufacturing methods, as well as polyamide resins, positive photosensitive resin compositions, protective films, interlayer insulating films, semiconductor devices and display devices.
Inventors:
FEDYNYDHYN THEODORE H
Application Number:
PCT/US2002/014671
Publication Date:
July 24, 2003
Filing Date:
May 09, 2002
Export Citation:
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Assignee:
MASSACHUSETTS INST TECHNOLOGY (US)
International Classes:
G03F7/004; G03F7/039; (IPC1-7): G03F7/004; G03F7/039
Domestic Patent References:
WO2000067072A12000-11-09
Foreign References:
EP0628876A11994-12-14
EP0789279A11997-08-13
EP0932082A21999-07-28
JP2000191732A2000-07-11
JP2000267287A2000-09-29
US6063542A2000-05-16
DE4207261A11993-09-09
Other References:
DATABASE WPI Section Ch Week 199809, Derwent World Patents Index; Class A89, AN 1998-096984, XP002192927
G.W. REYNOLDS ET AL.: "Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by X-ray lithography", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), vol. 17, no. 2, March 1999 (1999-03-01), USA, pages 334 - 344, XP002212841
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