Title:
RESONANCE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/007787
Kind Code:
A1
Abstract:
A resonance device (1) comprises: a first substrate (50) including a first silicon substrate (P10) and a resonator (10); a second substrate (30) facing the first substrate (50); and a frame-shaped bonding part (H) that bonds the first substrate (50) and the second substrate (30) so as to seal a vibration space for the resonator (10). The resonator (10) has a single crystal silicon film (F2) and a first silicon oxide film (F21) sandwiched by the single crystal silicon film (F2) and the first silicon substrate (P10). The first silicon oxide film (F21) is segmented by a first blocking member (B11) formed in a frame shape surrounding a vibration unit (110) of the resonator (10) when the first substrate (50) is observed in a planar view. Between the first substrate (50) and the second substrate (30), the resonator (10) of the first substrate (50) is provided with a through-hole penetrating through the single crystal silicon film (F2) and the first silicon oxide film (F21), and the inside of the through-hole is provided with the first blocking member (B11). The first blocking member (B11) has a helium permeability that is lower than that of the first silicon oxide film (F21).
Inventors:
FUKUMITSU MASAKAZU (JP)
HIGUCHI YOSHIYUKI (JP)
KISHI TAKEHIKO (JP)
HIGUCHI YOSHIYUKI (JP)
KISHI TAKEHIKO (JP)
Application Number:
PCT/JP2022/007130
Publication Date:
February 02, 2023
Filing Date:
February 22, 2022
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03H3/007; H03H9/24
Domestic Patent References:
| WO2020194810A1 | 2020-10-01 | |||
| WO2017047663A1 | 2017-03-23 | |||
| WO2011125414A1 | 2011-10-13 |
Foreign References:
| JP2013059855A | 2013-04-04 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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