RESONATOR DEVICE AND FILTER

WIPO Patent Application WO/2022/174518

A1

Disclosed are a resonator device and a filter. The resonator device comprises a wafer substrate, a piezoelectric layer and an interdigital electrode layer; the piezoelectric layer is located at one side of the wafer substrate and comprises a piezoelectric single crystal material; a main positioning edge of the wafer substrate is located in a first direction, and the piezoelectric single crystal material comprises a first crystal axis, a second crystal axis and a third crystal axis which are perpendicular to one another; the first crystal axis is perpendicular to the wafer substrate, or the first crystal axis is parallel to the wafer substrate and an included angle between the first crystal axis and the first direction is less than or equal to 30 degrees, or the first crystal axis is parallel to the wafer substrate and an included angle between the first crystal axis and the first direction is greater than or equal to 60 degrees and less than or equal to 120 degrees; the second crystal axis is parallel to the wafer substrate and an included angle between the second crystal axis and the first direction is less than or equal to 60 degrees, or an included angle between the second crystal axis and a direction perpendicular to the wafer substrate is greater than or equal to 120 degrees and less than or equal to 135 degrees.

GONG SONGBIN (CN)
YANG YANSONG (CN)

PCT/CN2021/091884

August 25, 2022

May 06, 2021

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SPECTRON SHENZHEN TECH CO LTD (CN)

H03H9/17; H03H3/02; H03H9/54

CN204408291U	2015-06-17
CN107800396A	2018-03-13
CN107508571A	2017-12-22
US20120096697A1	2012-04-26

BEYOND ATTORNEYS AT LAW (CN)

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