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Title:
RESONANT DEVICE AND ACOUSTIC FILTER
Document Type and Number:
WIPO Patent Application WO/2022/174519
Kind Code:
A1
Abstract:
Disclosed are a resonant device and an acoustic filter. The resonant device comprises a wafer substrate, a piezoelectric layer and an interdigital electrode layer; the piezoelectric layer is located on one side of the wafer substrate and comprises a piezoelectric monocrystal material, the piezoelectric monocrystal material comprising a first crystal axis, a second crystal axis and a third crystal axis which are perpendicular to one another; and the interdigital electrode layer is located on the side of the piezoelectric layer that is away from the wafer substrate, and is configured to generate an electric field in the piezoelectric layer, the direction of the electric field being the direction of the device, wherein the first crystal axis is perpendicular to the wafer substrate, and the rotation angle by which the device direction is rotated to the second crystal axis is an angle A1, where -30°≤A1≤10°; or, the first crystal axis is perpendicular to the wafer substrate, and the rotation angle by which the device direction is rotated to the second crystal axis is an angle A2, where 170°≤A2≤210° or-210°≤A2≤-170°; or, the rotation angle by which the second crystal axis is rotated to be perpendicular to the direction of the wafer substrate is an angle B1, where -20°≤B1≤40°, and the rotation angle by which the device direction is rotated to the first crystal axis is an angle B2, where -20°≤B2≤20°.

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Inventors:
GONG SONGBIN (CN)
YANG YANSONG (CN)
Application Number:
PCT/CN2021/091885
Publication Date:
August 25, 2022
Filing Date:
May 06, 2021
Export Citation:
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Assignee:
SPECTRON SHENZHEN TECH CO LTD (CN)
International Classes:
H03H9/25; H03H9/64
Domestic Patent References:
WO2019185415A12019-10-03
Foreign References:
CN106575957A2017-04-19
CN110138356A2019-08-16
CN107636961A2018-01-26
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
Download PDF:
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