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Title:
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/203429
Kind Code:
A1
Abstract:
Provided is a high-definition display device. This display device has a transistor, wherein a semiconductor layer of the transistor is provided inside an opening formed in an interlayer insulation layer on a substrate. A floating-state conductive layer is provided below the opening. A source electrode and a drain electrode are provided on the interlayer insulation layer at positions facing each other with the opening therebetween in a plan view. A gate insulation layer and a gate electrode are provided on the semiconductor layer. A region along a side surface of the opening within the semiconductor layer can be made to serve as a channel forming region.

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Inventors:
KIMURA HAJIME (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/053621
Publication Date:
October 26, 2023
Filing Date:
April 10, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G09F9/30; H01L29/786; H10K50/00; H10K59/00
Foreign References:
JP2008034760A2008-02-14
JP2012195574A2012-10-11
JP2018109769A2018-07-12
JP2012220851A2012-11-12
JP2006510210A2006-03-23
JP2009016368A2009-01-22
US20070087468A12007-04-19
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