Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/203428
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which has a high degree of integration. The semiconductor device has first and second transistors which are electrically connected to each other and a first insulating layer. The first transistor has a first semiconductor layer, a second insulating layer, and first to third conductive layers. The second transistor has a second semiconductor layer, a third insulating layer, and fourth to sixth conductive layers. The first insulating layer is disposed on the first conductive layer, and has an opening that reaches the first conductive layer. The second conductive layer is disposed on the first insulating layer. The first semiconductor layer is in contact with the upper surface of the first conductive layer, the inner wall of the opening, and the second conductive layer. The third conductive layer is disposed on the second insulating layer so as to overlap with the inner wall of the opening. The third insulating layer is disposed on the fourth conductive layer. The fifth and sixth conductive layers are disposed on the fourth conductive layer with the third insulating layer therebetween. The second semiconductor layer is in contact with the upper surfaces of the fifth and sixth conductive layers, lateral surfaces of the same mutually facing each other, and the upper surface of the third insulating layer interposed between the fifth conductive layer and the sixth conductive layer.
Inventors:
HOSAKA YASUHARU
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
JINTYOU MASAMI
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
DOBASHI MASAYOSHI
JINTYOU MASAMI
Application Number:
PCT/IB2023/053620
Publication Date:
October 26, 2023
Filing Date:
April 10, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G09F9/00; G09F9/30; H01L21/8234; H01L27/088; H01L29/786; H05B33/10; H05B44/00; H10K50/00
Domestic Patent References:
| WO2015174197A1 | 2015-11-19 |
Foreign References:
| US20120319201A1 | 2012-12-20 | |||
| US20070205431A1 | 2007-09-06 | |||
| JP2018046165A | 2018-03-22 | |||
| US20180287081A1 | 2018-10-04 | |||
| JPH09293861A | 1997-11-11 |
Download PDF: