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Title:
SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/140100
Kind Code:
A1
Abstract:
Provided is a semiconductor device with which it is possible to achieve an increase in heat conductivity from a semiconductor element to a substrate, and to obtain a stable heat-dissipation characteristic.　The semiconductor device comprises a substrate, a semiconductor element provided on the substrate, and a heat-conductive material that has fluidity and is filled in a space portion between the substrate and the semiconductor element. The substrate has one or a plurality of intra-substrate hollow portions formed therein of which one end is placed in communication with the space portion to receive the heat-conductive material.

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Inventors:
TSUKADA ATSUSHI (JP)
Application Number:
PCT/JP2022/048692
Publication Date:
July 27, 2023
Filing Date:
December 28, 2022
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L23/36; H01L23/02
Domestic Patent References:
WO2015102046A12015-07-09
Foreign References:
JP2008172092A2008-07-24
JP2012191002A2012-10-04
JP2019125643A2019-07-25
JPH04359496A1992-12-11
JP2007299630A2007-11-15
US20200350228A12020-11-05
US20080150154A12008-06-26
CN201956388U2011-08-31
Attorney, Agent or Firm:
MATSUO Kenichiro (JP)
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