Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/084786
Kind Code:
A1
Abstract:
A semiconductor device having a novel configuration and comprising a memory cell that has a ferroelectric capacitor, wherein said semiconductor device has a first transistor (500A), a second transistor (500B), a first capacitor (600A), a second capacitor (600B), and wiring (401). The first transistor is electrically connected to the first capacitor. The second transistor is electrically connected to the second capacitor. The wiring is positioned below the first transistor and the second transistor, and is electrically connected to the first transistor or the second transistor. The first capacitor and the second capacitor each has a ferroelectric layer (630). The first capacitor is positioned in the same plane as the second capacitor. The first capacitor and the second capacitor may also have mutually overlapping regions. It is preferable that the first transistor and the second transistor each have an oxide semiconductor in a channel. It is preferable that the ferroelectric layer has one or more selected from hafnium, zirconium, or group III to V elements.
Inventors:
YAMAZAKI SHUNPEI (JP)
IKEDA TAKAYUKI (JP)
KUNITAKE HITOSHI (JP)
ONUKI TATSUYA (JP)
IKEDA TAKAYUKI (JP)
KUNITAKE HITOSHI (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2021/059226
Publication Date:
April 28, 2022
Filing Date:
October 08, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/11507; H01L21/8234; H01L27/088; H01L27/11509; H01L27/1159; H01L29/786
Foreign References:
| JP2001196552A | 2001-07-19 | |||
| JP2003060171A | 2003-02-28 | |||
| JP2017011299A | 2017-01-12 |
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