Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/060115
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method, comprising a step for forming a ruthenium film on a metal film, which is a cobalt film or a tungsten film and formed on a substrate for manufacturing a semiconductor device, involves performing a step for supplying boron compound gas to the substrate, on which the metal film is formed, so that an intermediate layer is formed which contains ruthenium and boron and is for suppressing interfacial diffusion between the metal film and the ruthenium film when the substrate is heated after the ruthenium film is formed, and then performing a step for forming the ruthenium film.
Inventors:
ARAKI MASATO (JP)
SATOH KOHICHI (JP)
ISHIZAKA TADAHIRO (JP)
TAKATSUKI KOICHI (JP)
SAKUMA TAKASHI (JP)
SATOH KOHICHI (JP)
ISHIZAKA TADAHIRO (JP)
TAKATSUKI KOICHI (JP)
SAKUMA TAKASHI (JP)
Application Number:
PCT/JP2020/035133
Publication Date:
April 01, 2021
Filing Date:
September 16, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/16; H01L21/28; H01L21/3205; H01L21/768; H01L23/532
Foreign References:
| JP2013175702A | 2013-09-05 | |||
| US20070054487A1 | 2007-03-08 | |||
| US7425506B1 | 2008-09-16 | |||
| JP2007533161A | 2007-11-15 |
Attorney, Agent or Firm:
YAYOY PATENT OFFICE (JP)
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