Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, POWER CONVERSION CIRCUIT, AND VEHICLE
Document Type and Number:
WIPO Patent Application WO/2024/060262
Kind Code:
A1
Abstract:
The present application discloses a semiconductor device, a manufacturing method, a power conversion circuit, and a vehicle. The semiconductor device comprises: an N-type semiconductor substrate, a first epitaxial layer, multiple gate trenches that are spaced apart from each other, a gate, an interlayer dielectric layer, a source, and a drain. The multiple gate trenches are arranged in the first epitaxial layer; the multiple gate trenches extend in a first direction; the gate comprises a first gate and a second gate in contact with each other, wherein the gate trenches are filled with the first gate with a gate dielectric layer interposed therebetween, and the second gate is arranged at the top of the first epitaxial layer with a gate dielectric layer interposed therebetween; the interlayer dielectric layer covers the side of the gate away from the semiconductor substrate, and is provided with a contact hole extending in a second direction; the source is arranged on the side of the interlayer dielectric layer away from the semiconductor substrate, and is in contact with the first epitaxial layer by means of the contact hole; and the drain is arranged on the side of the semiconductor substrate away from the first epitaxial layer. Thus, the total on-resistance of a device is reduced.
Inventors:
HAMADA KIMIMORI (CN)
HU FEI (CN)
HU FEI (CN)
Application Number:
PCT/CN2022/121116
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/16; H01L29/423
Foreign References:
| US20180005959A1 | 2018-01-04 | |||
| CN101997033A | 2011-03-30 | |||
| CN114628516A | 2022-06-14 | |||
| CN203983264U | 2014-12-03 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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