Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR, POWER CONVERSION CIRCUIT AND VEHICLE
Document Type and Number:
WIPO Patent Application WO/2024/060261
Kind Code:
A1
Abstract:
The present application discloses a semiconductor device and a preparation method therefor, a power conversion circuit and a vehicle. The semiconductor device comprises: an N-type semiconductor substrate, an epitaxial layer, a trench structure, a gate electrode, an interlayer dielectric layer, a source electrode and a drain electrode, wherein the trench structure is arranged in the epitaxial layer, the trench structure comprising a plurality of first trenches and a second trench, the first trenches extending in a first direction and being arranged at intervals in a second direction, the second trench extending in the second direction, and the second trench and each of the plurality of first trenches being cross-arranged and being in communication with each other; the gate electrode is filled in the trench structure across a gate dielectric layer; the interlayer dielectric layer covers the gate electrode and is provided with contact holes extending in the second direction; the source electrode is arranged on the interlayer dielectric layer and is in contact with the epitaxial layer via the contact holes; and the drain electrode is arranged on a side of the semiconductor substrate away from the epitaxial layer. In this way, the total on-resistance of the device is reduced.
Inventors:
HAMADA KIMIMORI (CN)
HU FEI (CN)
HU FEI (CN)
Application Number:
PCT/CN2022/121115
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN102339863A | 2012-02-01 | |||
| CN114503278A | 2022-05-13 | |||
| CN110444471A | 2019-11-12 | |||
| US20200235239A1 | 2020-07-23 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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